The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied p
ressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.
We performed high pressure experiments on La(0.8)Ca(0.2-x)Sr(x)MnO(3) (LCSMO) (0<x< 0.2) ceramic samples in order to analyze the validity of the well known relation between the A mean ionic radius (<rA>) and the Curie temperature Tc of hole-doped man
ganites at a fixed doping level and for doping values below the 0.3 (Mn+4/Mn+3) ratio. By considering our results and collecting others from the literature, we were able to propose a phenomenological law that considers the systematic dependence of Tc with structural and electronic parameters. This law predicts fairly well the pressure sensitivity of Tc, its dependence with the A-cation radius disorder and its evolution in the high pressure range. Considering a Double Exchange model, modified by polaronic effects, the phenomenological law obtained for Tc can be associated with the product of two terms: the polaronic modified bandwidth and an effective hole doping.
