We report on the synthesis of CdSe quantum dots on a graphene surface by an electrochemical deposition method. By using a mesoporous silica film formed on the graphene surface as a template and a potential equalizer between the edge/defect sites and
the basal plane of the graphene, CdSe quantum dots can be grown on the basal plane into a regular hexagonal array.
We present an experimental investigation on the scaling of resistance in individual single walled carbon nanotube devices with channel lengths that vary four orders of magnitude on the same sample. The electron mean free path is obtained from the lin
ear scaling of resistance with length at various temperatures. The low temperature mean free path is determined by impurity scattering, while at high temperature the mean free path decreases with increasing temperature, indicating that it is limited by electron-phonon scattering. An unusually long mean free path at room temperature has been experimentally confirmed. Exponentially increasing resistance with length at extremely long length scales suggests anomalous localization effects.
