Silicon heterojunction (SHJ) solar cells with an interdigitated back-contact (IBC) exhibit high conversion efficiencies of up to 25.6%. However, due to the sophisticated back-side pattern of the doped layers and electrode structure many processing an
d patterning steps are required. A simplification of the patterning steps could ideally increase the yield and/or lower the production costs. We propose a patterning approach for IBC SHJ solar cells free of any photo-lithography with the help of laser-induced forward transfer (LIFT) of the individual layer stacks to create the required back-contact pattern. The concept has the potential to lower the number of processing steps significantly while at the same time giving a large degree of freedom in the processing conditions optimization of emitter and BSF since deposition of the intrinsic/doped layers and processing of the wafer are all independent from each other.
