We predict that in a twisted homobilayer of transition-metal dichalcogenide MoS$_2$, spin-orbit coupling in the conduction band states from $pm K$ valleys can give rise to moir{e} flat bands with nonzero Chern numbers in each valley. The nontrivial b
and topology originates from a unique combination of angular twist and local mirror symmetry breaking in each individual layer, which results in unusual skyrmionic spin textures in momentum space with skyrmion number $mathcal{S} = pm 2$. Our Hartree-Fock analysis further suggests that density-density interactions generically drive the system at $1/2$-filling into a valley-polarized state, which realizes a correlated quantum anomalous Hall state with Chern number $mathcal{C} = pm 2$. Effects of displacement fields are discussed with comparison to nontrivial topology from layer-pseudospin magnetic fields.
Recent studies have shown that moir{e} flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern insulator near the
3/4 filling [3, 4]. In this work, we show that the large Berry curvatures in the moir{e} bands lead to strong nonlinear Hall(NLH) effect in a strained TBG with general filling factors. Under a weak uniaxial strain $sim 0.1%$, the Berry curvature dipole which characterizes the nonlinear Hall response can be as large as $sim$ 200{AA}, exceeding the values of all previously known nonlinear Hall materials [5-14] by two orders of magnitude. The dependence of the giant NLH effect as a function of electric gating, strain and twist angle is further investigated systematically. Importantly, we point out that the giant NLH effect appears generically for twist angle near the magic angle due to the strong susceptibility of nearly flat moir{e} bands to symmetry breaking induced by strains. Our results establish TBG as a practical platform for tunable NLH effect and novel transport phenomena driven by nontrivial Berry phases.
Recent experiments reported gate-induced superconductivity in the monolayer 1T$$-WTe$_2$ which is a two-dimensional topological insulator in its normal state [1, 2]. The in-plane upper critical field $B_{c2}$ is found to exceed the conventional Pauli
paramagnetic limit $B_p$ by 1-3 times. The enhancement cannot be explained by conventional spin-orbit coupling which vanishes due to inversion symmetry. In this work, we unveil some distinctive superconducting properties of centrosymmetric 1T$$-WTe$_2$ which arise from the coupling of spin, momentum and band parity degrees of freedom. As a result of this spin-orbit-parity coupling: (i) there is a first-order superconductor-metal transition at $B_{c2}$ much higher than the Pauli paramagnetic limit $B_p$, (ii) spin-susceptibility is anisotropic with respect to in-plane directions and results in anisotropic $B_{c2}$ and (iii) the $B_{c2}$ exhibits a strong gate dependence as the spin-orbit-parity coupling is significant only near the topological band crossing points. The importance of SOPC on the topologically nontrivial inter-orbital pairing phase is also discussed. Our theory generally applies to centrosymmetric materials with topological band
An external magnetic field is needed to drive a nanowire in proximity to an s-wave superconductor into a topological regime which supports Majorana end states. However, a magnetic field generally suppresses the proximity superconducting gap induced o
n the nanowire. In recent experiments using InSb nanowires coupled to Al, the induced proximity gap vanishes at magnetic fields B~1T. This results in a small superconducting gap on the wire and a narrow topological regime which is proportional to the strength of the magnetic field. In this work, we show that by placing nanowires in proximity to recently discovered Ising superconductors such as the atomically thin transition-metal dichalcogenide(TMD) NbSe2, the topological superconducting gap on the wire can maintain at a large magnetic field as strong as B~10T. This robust topological superconducting gap is induced by the unique equal-spin triplet Cooper pairs of the parent Ising superconductor. The strong magnetic field allows a topological regime ten times larger than those in InSb wires coupled to Al. Our work establishes a realistic platform for building robust Majorana-based qubits.
Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures, Berry-curvatur
e dipoles created by spin degrees of freedom lead to strong nonlinear Hall effects. Under an easily accessible uniaxial strain of order 0.2%, strong nonlinear Hall signals, characterized by a Berry-curvature dipole on the order of 1{AA}, arise in electron-doped polar TMDs such as MoSSe, and this is easily detectable experimentally. Moreover, the magnitude and sign of the nonlinear Hall current can be easily tuned by electric gating and strain. These properties can be used to distinguish nonlinear Hall effects from classical mechanisms such as ratchet effects. Importantly, our system provides a potential scheme for building electrically switchable energy-harvesting rectifiers.
Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from differen
t valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here, we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological quantum origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.
In this work, we consider a 3D cubic optical lattice composed of coupled 1D wires with 1D spin-orbit coupling. When the s-wave pairing is induced through Feshbach resonance, the system becomes a topological superfluid with ring nodes, which are the r
ing nodal degeneracies in the bulk, and supports a large number of surface Majorana zero energy modes. The large number of surface Majorana modes remain at zero energy even in the presence of disorder due to the protection from a chiral symmetry. When the chiral symmetry is broken, the system becomes a Weyl topological superfluid with Majorana arcs. With 3D spin-orbit coupling, the Weyl superfluid becomes a novel gapless phase with spiral Majorana modes on the surface. The spatial resolved radio frequency spectroscopy is suggested to detect this novel nodal ring topological superfluid phase.
In transition-metal dichalcogenides, electrons in the K-valleys can experience both Ising and Rashba spin-orbit couplings. In this work, we show that the coexistence of Ising and Rashba spin-orbit couplings leads to a special type of valley Hall effe
ct, which we call spin-orbit coupling induced valley Hall effect. Importantly, near the conduction band edge, the valley-dependent Berry curvatures generated by spin-orbit couplings are highly tunable by external gates and dominate over the intrinsic Berry curvatures originating from orbital degrees of freedom under accessible experimental conditions. We show that the spin-orbit coupling induced valley Hall effect is manifested in the gate dependence of the valley Hall conductivity, which can be detected by Kerr effect experiments.
In this work, we predict the emergence of the valley Edelstein Effect (VEE), which is an electric-field-induced spin polarization effect, in gated monolayer transition metal dichalcogenides (MTMDs). We found an unconventional valley-dependent respons
e in which the spin-polarization is parallel to the applied electric field with opposite spin-polarization generated by opposite valleys. This is in sharp contrast to the conventional Edelstein effect in which the induced spin-polarization is perpendicular to the applied electric field. We identify the origin of VEE as combined effects of conventional Edelstein effect and valley-dependent Berry curvatures induced by coexisting Rashba and Ising SOCs in gated MTMDs. Experimental schemes to detect the VEE are also considered.
In this work, we review the results of several recent works on the experimental and theoretical studies of monolayer superconducting transition metal dichalcogenides (TMD) such as superconducting MoS2 and NbSe2. We show how the strong Ising spin-orbi
t coupling (SOC), a special type of SOC which pins electron spins to out-of-plane directions, can affect the superconducting properties of the materials. Particularly, we discuss how the in-plane upper critical fields of the materials can be strongly enhanced by Ising SOC and how TMD materials can be used to engineer topological superconductors and nodal topological superconductors which support Majorana fermions.
