Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ulti
mately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields.
