An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated using rel
atively large devices at ultra-low temperatures, where they give rise to a fine additional structure on the Coulomb oscillations [2-13]. Here, we report transport measurements carried out on a sub-2nm single-electron device; this size is sufficiently small that Coulomb blockade, and other quantum effects, persist up to room temperature (RT). These devices were made by scaling the size of a FinFET structure down to an ultimate limiting form, resulting in the reliable formation of a sub-2nm silicon Coulomb island. Four clear Coulomb diamonds can be observed at RT and the 2nd Coulomb diamond is unusually large, due to quantum confinement. The observed characteristics are successfully modeled on the basis of a very low electron number on the island, combined with Pauli spin exclusion. These effects offer additional functionality for future RT-operating single-electron device applications
