In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning t
unneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related conductance is observed in negative, zero, and positive band-bending regimes. An Anderson-Hubbard model is used to rationalize our findings, capturing the crossover between the acceptor state being part of an impurity band for zero band bending, and the acceptor state being split off and localized for strong negative or positive band bending, respectively.
Negative differential conductance (NDC) is a non-linear transport phenomenon ubiquitous in molecular nanojunctions. Its physical origin can be the most diverse. In rotationally symmetric molecules with orbitally degenerate many-body states, it can be
ascribed to interference effects. We establish in this paper a criterion to identify the interference blocking scenario by correlating the spectral and the topographical information achievable in an STM single molecule measurement. Simulations of current voltage characteristics and current maps for a Cu-Phthalocyanine (CuPc) on a thin insulating film are presented as experimentally relevant examples.
We investigate bistability and memory effects in a molecular junction weakly coupled to metallic leads with the latter being subject to an adiabatic periodic change of the bias voltage. The system is described by a simple Anderson-Holstein model and
its dynamics is calculated via a master equation approach. The controlled electrical switching between the many-body states of the system is achieved due to polaron shift and Franck-Condon blockade in the presence of strong electron-vibron interaction. Particular emphasis is given to the role played by the excited vibronic states in the bistability and hysteretic switching dynamics as a function of the voltage sweeping rates. In general, both the occupation probabilities of the vibronic states and the associated vibron energy show hysteretic behaviour for driving frequencies in a range set by the minimum and maximum lifetimes of the system. The consequences on the transport properties for various driving frequencies and in the limit of DC-bias are also investigated.
A microscopic theory of the transport in a scanning tunnelling microscope (STM) set-up is introduced for pi-conjugated molecules on insulating films, based on the density matrix formalism. A key role is played in the theory by the energy dependent tu
nnelling rates which account for the coupling of the molecule to the tip and to the substrate. In particular, we analyze how the geometrical differences between the localized tip and extended substrate are encoded in the tunnelling rate and influence the transport characteristics. Finally, using benzene as an example of a planar, rotationally symmetric molecule, we calculate the STM current voltage characteristics and current maps and analyze them in terms of few relevant angular momentum channels.
A low energy theory of suspended carbon nanotube quantum dots in weak tunnelling coupling with metallic leads is presented. The focus is put on the dependence of the spectrum and the Franck-Condon factors on the geometry of the junction including sev
eral vibronic modes. The relative size and the relative position of the dot and its associated vibrons strongly influence the electromechanical properties of the system. A detailed analysis of the complete parameters space reveals different regimes: in the short vibron regime the tunnelling of an electron into the nanotube generates a plasmon-vibron excitation while in the long vibron regime polaron excitations dominate the scenario. The small, position dependent Franck-Condon couplings of the small vibron regime convert into uniform, large couplings in the long vibron regime. Selection rules for the excitations of the different plasmon-vibron modes via electronic tunnelling events are also derived.
A theoretical model of a single molecule coupled to many vibronic modes is presented. At low energies, transport is dominated by electron-vibron processes where transfer of an electron through the dot is accompanied by the excitation/emission of quan
ta (vibrons). Because the frequency of the $n$th mode is taken as an $n$th multiple of the frequency of the fundamental mode, several energetically degenerate or quasi-degenerate vibronic configurations can contribute to transport. We investigate the consequences of strong electron-vibron coupling in a fully emph{symmetric} set-up. Several striking features are predicted. In particular, a gate-asymmetry and pronounced negative differential conductance features are observed. We attribute these features to the presence of slow channels originating from the interplay of Franck-Condon suppression of transport channels and spin/orbital degeneracies.
We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at specific va
lues of the bias and gate voltage. We present here a general formalism to give necessary and sufficient conditions for interference blockade also in the presence of spin polarized leads. As an example we analyze a triple quantum dot single electron transistor (SET). For a set-up with parallel polarized leads, we show how to selectively prepare the system in each of the three states of an excited spin triplet without application of any external magnetic field.
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux provide the
solid-state analogous. Intra-molecular interference has been recently discussed in molecular junctions. Here we propose to exploit interference to achieve all-electrical control of a single electron spin in quantum dots, a highly desirable property for spintronics and spin-qubit applications. The device consists of an interference single electron transistor (ISET), where destructive interference between orbitally degenerate electronic states produces current blocking at specific bias voltages. We show that in the presence of parallel polarized ferromagnetic leads the interplay between interference and the exchange coupling on the system generates an effective energy renormalization yielding different blocking biases for majority and minority spins. Hence, by tuning the bias voltage full control over the spin of the trapped electron is achieved.
