We study the Hall conductivity of a two-dimensional electron gas under an inhomogeneous magnetic field $B(x)$. First, we prove using the quantum kinetic theory that an odd magnetic field can lead to a purely nonlinear Hall response. Second, consideri
ng a real-space magnetic dipole consisting of a sign-changing magnetic field and based on numerical semiclassical dynamics, we unveil a parametric resonance involving the cyclotron ratio and a characteristic width of $B(x)$, which can greatly enhance the Hall response. Different from previous mechanisms that rely on the bulk Berry curvature dipole, here, the effect largely stems from boundary states associated with the real-space magnetic dipole. Our findings pave a new way to engineer current rectification and higher harmonic generation in two-dimensional materials having or not crystal inversion symmetry.
We investigate the spectral properties of one-dimensional lattices with position-dependent hopping amplitudes and on-site potentials that are smooth bounded functions of position. We find an exact integral form for the density of states (DOS) in the
limit of an infinite number of sites, which we derive using a mixed Bloch-Wannier basis consisting of piecewise Wannier functions. Next, we provide an exact solution for the inverse problem of constructing the position-dependence of hopping in a lattice model yielding a given DOS. We confirm analytic results by comparing them to numerics obtained by exact diagonalization for various incarnations of position-dependent hoppings and on-site potentials. Finally, we generalize the DOS integral form to multi-orbital tight-binding models with longer-range hoppings and in higher dimensions.
We investigate spin-charge conversion phenomena in hybrid structures of topological insulator (TI) thin films and magnetic insulators. We find an anisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunable spin-orbit torque (SOT). Co
ncentrating on the quasiballistic limit, we also predict a giant anisotropic magnetoresistance (AMR) at low dopings. These effects, which have no counterparts in thick TIs, depend on the simultaneous presence of the hybridization between the surface states and the in-plane magnetization. Both the ISGE and AMR exhibit a strong dependence on the magnetization and the Fermi level position and can be utilized for spintronics and SOT-based applications at the nanoscale.
We theoretically explore the RKKY interaction mediated by spin-3/2 quasiparticles in half-Heusler topological semimetals in quasi-two-dimensional geometries. We find that while the Kohn-Luttinger terms gives rise to generalized Heisenberg coupling of
the form ${cal H}_{rm RKKY} propto {sigma}_{1,i} {cal I}_{ij} {sigma}_{2,j}$ with a symmetric matrix ${cal I}_{ij}$, addition of small antisymmetric linear spin-orbit coupling term leads to Dzyaloshinskii-Moriya (DM) coupling with an antisymmetric matrix ${cal I}_{ij}$. We demonstrate that besides the oscillatory dependence on the distance, all coupling strengths strongly depend on the relative orientation of the two impurities with respect to the lattice. This yields a strongly anisotropic behavior for ${cal I}_{ij}$ such that by only rotating one impurity around another at a constant distance, we can see further oscillations of the RKKY couplings. This unprecedented effect is unique to our system which combines spin-orbit coupling with strongly anisotropic Fermi surfaces. We further find that all of the RKKY terms have two common features: a tetragonal warping in their map of spatial variations, and a complex beating pattern. Intriguingly, all these features survive in all dopings and we see them in both electron- and hole-doped cases. In addition, due to the lower dimensionality combined with the effects of different spin-orbit couplings, we see that only one symmetric off-diagonal term, ${cal I}_{xy}$ and two DM components ${cal I}_{xz}$ and ${cal I}_{yz}$ are nonvanishing, while the remaining three off-diagonal components are identically zero. This manifests another drastic difference of RKKY interaction in half-Heusler topological semimetals compared to the electronic systems with spin-1/2 effective description.
We investigate the influence of gauge fields induced by strain on the supercurrent passing through the graphene-based Josephson junctions. We show in the presence of a constant pseudomagnetic field ${bf B}_S$ originated from an arc-shape elastic defo
rmation, the Josephson current is monotonically enhanced. This is in contrast with the oscillatory behavior of supercurrent (known as Fraunhofer pattern) caused by real magnetic fields passing through the junction. The absence of oscillatory supercurrent originates from the fact that strain-induced gauge fields have opposite directions at the two valleys due to the time-reversal symmetry. Subsequently there is no net Aharonov-Bohm effect due to ${bf B}_S$ in the current carried by the bound states composed of electrons and holes from different valleys. On the other hand, when both magnetic and pseudomagnetic fields are present, Fraunhofer-like oscillations as function of the real magnetic field flux are found. We find that the Fraunhofer pattern and in particular its period slightly change by varying the strain-induced gauge field as well as the geometric aspect ratio of the junction. Intriguingly, the combination of two kinds of gauge fields results in two special fingerprint in the local current density profile: (i) strong localization of the Josephson current density with more intense maximum amplitudes; (ii) appearance of the inflated vortex cores - finite regions with almost diminishing Josephson currents - which their sizes increases by increasing ${bf B}_S$. These findings reveal unexpected interference signatures of strain-induced gauge fields in graphene SNS junctions and provide unique tools for sensitive probing of the pseudomagnetic fields.
We investigate the band structure and topological phases of silicene embedded on halogenated Si(111) surface, by virtue of density functional theory and tight-binding calculations.Our results show that the Dirac character of low energy excitations in
silicene is almost preserved in the presence of silicon substrate passivated by various halogens. Nevertheless, the combined effects of charge transfer into the substrate, stretching of bonds between silicon atoms, and symmetry breaking which originates from van der Waals interaction, result in a gap $E_{g1}$ in the spectrum of the embedded silicene. We further take the spin-orbit interaction into account and obtain its strength and the resulting enhancement in the gap $E_{g2}=2lambda$. Both $E_{g1}$ and $E_{g2}$ which contribute to the total gap, vary significantly when different halogen atoms are used for the passivation of the Si surface and for the case of iodine, they have very large values of $70$ and $23$ meV, respectively. To examine the topological properties, we calculate the projected band structure of silicene from which the tight binding parameters of the low-energy effective Hamiltonian are obtained by fitting. Our results based on Berry curvature and $mathbb{Z}_2$ invariant reveals that silicene on halogenated Si substrates has a topological insulating state which can survive even at room temperature for the substrate with iodine and bromine at the surface. Similar to the free standing silicene, by applying a perpendicular electric field and at a certain critical value which again depends on the type of halogens, the gap closes and silicene undergoes a transition to a trivial insulating state. As a key finding, we see that the presence of halogenated substrate except for the case of fluorine enhances the robustness of the topological phases against the vertical electric field and most probably other external perturbations.
We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic impurities, are m
uch longer when the Fermi level is inside the spin split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature $T_K$ on the doping is not strongly affected by the spin-orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and poor mans scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to $T_K$ which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials.
We show how a superconducting region (S) sandwiched between two normal leads (N), in the presence of barriers, can act as a lens for propagating electron and hole waves by virtue of the so- called crossed Andreev reflection (CAR). The CAR process whi
ch is equivalent to the Cooper pair splitting into the two N electrodes provides a unique possibility of constructing entangled electrons in solid state systems. When electrons are locally injected from an N lead, due to the CAR and normal reflection of quasiparticles by the insulating barriers at the interfaces, sequences of electron and hole focuses are established inside another N electrode. This behavior originates from the change of momentum during electron-hole conversion beside the successive normal reflections of electrons and holes due to the barriers. The focusing phenomena studied here is fundamentally different from the electron focusing in other systems like graphene pn junctions. In particular due to the electron-hole symmetry of superconducting state, the focusing of electrons and holes are robust against thermal excitations. Furthermore the effect of superconducting layer width, the injection point position, and barriers strength is investigated on the focusing behavior of the junction. Very intriguingly, it is shown that by varying the barriers strength, one can separately control the density of electrons or holes at the focuses.
We investigate the optical properties of an ultrathin film of a topological insulator in the presence of an in-plane magnetic field. We show that due to the combination of the overlap between the surface states of the two layers and the magnetic fiel
d, the optical conductivity can show strong anisotropy. This leads to the effective optical activity of the ultrathin film by influencing the circularly polarized incident light. Intriguingly, for a range of magnetic fields, the reflected and transmitted lights exhibit elliptic character. Even for certain values almost linear polarizations are obtained, indicating that the thin film can act as a polaroid in reflection. All these features are discussed in the context of the time reversal symmetry breaking as one of key ingredients for the optical activity.
We investigate the spin-dependent thermoelectric effects in magnetic graphene in both diffusive and ballistic regimes. Employing the Boltzmann and Landauer formalisms we calculate the spin and charge Seebeck coefficients (thermopower) in magnetic gra
phene varying the spin splitting, temperature, and doping of the junction. It is found that while in normal graphene the temperature gradient drive a charge current, in the case of magnetic graphene a significant spin current is also established. In particular we show that in the undoped magnetic graphene in which different spin carriers belong to conduction and valence bands, a pure spin current is driven by the temperature gradient. In addition it is revealed that profound thermoelectric effects can be achieved at intermediate easily accessible temperatures when the thermal energy is comparable with Fermi energy $k_BTlesssim mu$. By further investigation of the spin-dependent Seebeck effect and a significantly large figure of merit for spin thermopower $mathcal{Z}_{rm sp}T$, we suggest magnetic graphene as a promising material for spin-caloritronics studies and applications.
