Polariton lattice condensates provide a platform for on chip quantum emulations. Interactions in extended polariton lattices are currently limited by the intrinsic photonic disorder of microcavities. Here, we fabricate a strain compensated planar GaA
s/AlAs microcavity with embedded InGaAs quantum wells and report on polariton condensation under non-resonant optical excitation. Evidence of polariton condensation is supported spectroscopically both in reflection and transmission geometry, whilst the observation of a second threshold to photon lasing allows us to conclusively distinguish between the strong- and weak-coupling non-linear regimes.
Replacing independent single quantum wells inside a strongly-coupled semiconductor microcavity with double quantum wells produces a special type of polariton. Using asymmetric double quantum wells in devices processed into mesas allows the alignment
of the electron levels to be voltage-tuned. At the resonant electronic tunnelling condition, we demonstrate that `oriented polaritons are formed, which possess greatly enhanced dipole moments. Since the polariton-polariton scattering rate depends on this dipole moment, such devices could reach polariton lasing, condensation and optical nonlinearities at much lower threshold powers.
