We investigate the interplay between the thermodynamic properties and spin-dependent transport in a mesoscopic device based on a magnetic multilayer (F/f/F), in which two strongly ferromagnetic layers (F) are exchange-coupled through a weakly ferroma
gnetic spacer (f) with the Curie temperature in the vicinity of room temperature. We show theoretically that the Joule heating produced by the spin-dependent current allows a spin-thermo-electronic control of the ferromagnetic-to-paramagnetic (f/N) transition in the spacer and, thereby, of the relative orientation of the outer F-layers in the device (spin-thermo-electric manipulation of nanomagnets). Supporting experimental evidence of such thermally controlled switching from parallel to antiparallel magnetization orientations in F/f(N)/F sandwiches is presented. Furthermore, we show theoretically that local Joule heating due to a high concentration of current in a magnetic point contact or a nanopillar can be used to reversibly drive the weakly ferromagnetic spacer through its Curie point and thereby exchange couple and decouple the two strongly ferromagnetic F-layers. For the devices designed to have an antiparallel ground state above the Curie point of the spacer, the associated spin-thermionic parallel-to-antiparallel switching causes magneto-resistance oscillations whose frequency can be controlled by proper biasing from essentially DC to GHz. We discuss in detail an experimental realization of a device that can operate as a thermo-magneto-resistive switch or oscillator.
We propose a device that can operate as a magneto-resistive switch or oscillator. The device is based on a spin-thermo-electronic control of the exchange coupling of two strong ferromagnets through a weakly ferromagnetic spacer. We show that the loca
l Joule heating due to a high concentration of current in a magnetic point contact or a nanopillar can be used to reversibly drive the weak ferromagnet through its Curie point and thereby exchange-decouple the strongly ferromagnetic layers, which have an antiparallel ground state. Such a spin-thermionic parallel-to-antiparallel switching causes magnetoresistance oscillations where the frequency can be controlled by proper biasing from essentially DC to GHz.
