The superconducting pairing of electrons in doped graphene due to in-plane and out-of-plane phonons is considered. It is shown that the structure of the order parameter in the valley space substantially affects conditions of the pairing. Electron-hol
e pairing in graphene bilayer in the strong coupling regime is also considered. Taking into account retardation of the screened Coulomb pairing potential shows a significant competition between the electron-hole direct attraction and their repulsion due to virtual plasmons and single-particle excitations.
We consider the pairing of electrons and holes due to their Coulomb attraction in two parallel, independently gated graphene layers, separated by a barrier. At weak coupling, there exist the BCS-like pair-condensed state. Despite the fact that electr
ons and holes behave like massless Dirac fermions, the problem of BCS-like electron-hole pairing in graphene bilayer turns out to be rather similar to that in usual coupled semiconductor quantum wells. The distinctions are due to Berry phase of electronic wave functions and different screening properties. We estimate values of the gap in one-particle excitation spectrum for different interlayer distances and carrier concentrations. Influence of disorder is discussed. At large enough dielectric susceptibility of surrounding medium, the weak coupling regime holds even at arbitrarily small carrier concentrations. Localized electron-hole pairs are absent in graphene, thus the behavior of the system versus coupling strength is cardinally different from usual BCS-BEC crossover.
