We report an infrared spectroscopy study of a 200 nm thick FeSe$_{0.5}$Te$_{0.5}$ film grown on LaAlO$_3$ with T$_c$=13.7 K. We analyze the 20 K normal state absolute reflectance R$_N$ measured over a broad infrared range and the reflectance ratio R$
_S$/R$_N$, R$_S$ being the superconducting state reflectance, measured at 6 K in the terahertz range down to 12 cm$^{-1}$. We show that the normal state model conductivity is given by two Drude components, one of which much broader and intense than the other. In the superconducting state, we find that a gap $Delta$=37$pm$3 cm$^{-1}$ opens up in the narrow Drude band only, while the broad Drude band results to be ungapped, at least in the explored spectral range. Our results show that only a two-band model can coherently describe both normal and superconducting state data.
It has been recently reported (S. Lee et al., Nature Materials 12, 392, 2013) that superlattices where layers of the 8% Co-doped BaFe2As2 superconducting pnictide are intercalated with non superconducting ultrathin layers of either SrTiO3 or of oxyge
n-rich BaFe2As2, can be used to control flux pinning, thereby increasing critical fields and currents, without significantly affecting the critical temperature of the pristine superconducting material. However, little is known about the electron properties of these systems. Here we investigate the electrodynamics of these superconducting pnictide superlattices in the normal and superconducting state by using infrared reflectivity, from THz to visible range. We find that multi-gap structure of these superlattices is preserved, whereas some significant changes are observed in their electronic structure with respect to those of the original pnictide. Our results suggest that possible attempts to further increase the flux pinning may lead to a breakdown of the pnictide superconducting properties.
We report on an infrared study on the undoped compound BaFe2As2 as a function of both pressure (up to about 10 GPa) at three temperatures (300, 160, and 110 K). The evolution with pressure and temperature of the optical conductivity shows that, by in
creasing pressure, the mid-infrared absorptions associated with magnetic order are lowered while the Drude term increases, indicating the evolution towards a conventional metallic state. We evaluate the spectral weight dependence on pressure comparing it to that previously found upon doping. The whole optical results indicate that lattice modifications can not be recognized as the only parameter determining the low-energy electrodynamics in these compounds.
We address the in-plane pressure-dependent electrodynamics of graphite through synchrotron based infrared spectroscopy and ab initio Density Functional Theory calculations. The Drude term remarkably increases upon pressure application, as a consequen
ce of an enhancement of both electron and hole charge densities. This is due to the growth of the band dispersion along the k_z direction between the K and H points of the Brillouin zone. On the other hand, the mid-infrared optical conductivity between 800 and 5000 cm-1 is almost flat, and very weakly pressure dependent, at least up to 7 GPa. This demonstrates a surprising robustness of the graphene-like universal quantum conductance of graphite, even when the interlayer distance is significantly reduced.
We measure the optical conductivity of (SrMnO3)n/(LaMnO3)2n superlattices (SL) for n=1,3,5, and 8 and 10 < T < 400 K. Data show a T-dependent insulator to metal transition (IMT) for n leq 3, driven by the softening of a polaronic mid-infrared band. A
t n = 5 that softening is incomplete, while at the largest-period n=8 compound the MIR band is independent of T and the SL remains insulating. One can thus first observe the IMT in a manganite system in the absence of the disorder due to chemical doping. Unsuccessful reconstruction of the SL optical properties from those of the original bulk materials suggests that (SrMnO3)n/(LaMnO3)2n heterostructures give rise to a novel electronic state.
We present reflectance measurements in the infrared region on a single crystal the rare earth scandate DyScO3. Measurements performed between room temperature and 10 K allow to determine the frequency of the infrared-active phonons, never investigate
d experimentally, and to get information on their temperature dependence. A comparison with the phonon peak frequency resulting from ab-initio computations is also provided. We finally report detailed data on the frequency dependence of the complex refractive index of DyScO3 in the terahertz region, which is important in the analysis of terahertz measurements on thin films deposited on DyScO3.
We measured the THz reflectance properties of a high quality epitaxial thin film of the Fe-based superconductor BaFe$_{1.84}$Co$_{0.16}$As$_2$ with T$_c$=22.5 K. The film was grown by pulsed laser deposition on a DyScO$_3$ substrate with an epitaxial
SrTiO$_3$ intermediate layer. The measured $R_S/R_N$ spectrum, i.e. the reflectivity ratio between the superconducting and normal state reflectance, provides clear evidence of a superconducting gap $Delta_A$ close to 15 cm$^{-1}$. A detailed data analysis shows that a two-band, two-gap model is absolutely necessary to obtain a good description of the measured $R_S/R_N$ spectrum. The low-energy $Delta_A$ gap results to be well determined ($Delta_A$=15.5$pm$0.5 cm$^{-1}$), while the value of the high-energy gap $Delta_B$ is more uncertain ($Delta_B$=55$pm$7 cm$^{-1}$). Our results provide evidence of a nodeless isotropic double-gap scenario, with the presence of two optical gaps corresponding to 2$Delta/kT_c$ values close to 2 and 7.
The metal to insulator transition in the charge transfer NiS{2-x}Se{x} compound has been investigated through infrared reflectivity. Measurements performed by applying pressure to pure NiS2 (lattice contraction) and by Se-alloying (lattice expansion)
reveal that in both cases an anomalous metallic state is obtained. We find that optical results are not compatible with the linear Se-alloying vs Pressure scaling relation previously established through transport, thus pointing out the substantially different microscopic origin of the two transitions.
The possibility of multi-band conductivity and multi-gap superconductivity is explored in oriented V3Si thin films by means of reflectance and transmittance measurements at terahertz frequencies. The temperature dependence of the transmittance spectr
a in the normal state gives evidence of two bands contributing to the film conductivity. This outcome is consistent with electronic structure calculations performed within density functional theory. On this basis, we performed a detailed data analysis and found that all optical data can be consistently accounted for within a two-band framework, with the presence of two optical gaps in the superconducting state corresponding to 2D=kTc values close to 1.8 and 3.8.
The infrared conductivity of V2O3 is measured in the whole phase diagram. Quasiparticles appear above the Neel temperature TN and eventually disappear further enhancing the temperature, leading to a pseudogap in the optical spectrum above 425 K. Our
calculations demonstrate that this loss of coherence can be explained only if the temperature dependence of lattice parameters is considered. V2O3 is therefore effectively driven from the metallic to the insulating side of the Mott transition as the temperature is increased.
