By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a non-magnetic
GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a Giant Spin-dependent Photoconductivity (GSP) reaching up to 40 % without the need of an external magnetic field. We show that the GSP is due to a very efficient spin filtering effect of conduction band electrons on Nitrogen-induced Ga self-interstitial deep paramagnetic centers.
