We studied the intensity of resonant Raman scattering due to optical phonons in a planar II-VI-type semiconductor microcavity in the regime of strong coupling between light and matter. Two different sets of independent experiments were performed at n
ear outgoing resonance with the middle polariton (MP)branch of the cavity. In the first, the Stokes-shifted photons were kept at exact resonance with the MP, varying the photonic or excitonic character of the polariton. In the second, only the incoming light wavelength was varied, and the resonant profile of the inelastic scattered intensity was studied when the system was tuned out of the resonant condition. Taking some matrix elements as free parameters, both independent experiments are quantitatively described by a model which incorporates lifetime effects in both excitons and photons, and the coupling of the cavity photons to the electron-hole continuum. The model is solved using a Greens function approach which treats the exciton-photon coupling nonperturbatively.
We calculate the intensity of the polariton mediated inelastic light scattering in semiconductor microcavities. We treat the exciton-photon coupling nonperturbatively and incorporate lifetime effects in both excitons and photons, and a coupling of th
e photons to the electron-hole continuum. Taking the matrix elements as fitting parameters, the results are in excellent agreement with measured Raman intensities due to optical phonons resonant with the upper polariton branches in II-VI microcavities with embedded CdTe quantum wells.
