We report optical spectra of Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$, exhibiting the phenomenon of coexisting superconductivity or antiferromagnetism and charge density wave (CDW) order. We measure the maximum value of the charge density wave
gap present on part of the Fermi surface of Lu5Ir4Si10, corresponding to a ratio 2Delta/k_B T_CDW approx 10, well above the value in the limit of weak electron-phonon coupling. Strong electron-phonon coupling was confirmed by analyzing the optical conductivity with the Holstein model describing the electron-phonon interactions, indicating the coupling to phonons centered at 30 meV, with a coupling constant lambda approx 2.6. Finally we provide evidence that approximately 16 % of the Fermi surface of Lu5Ir4Si10 becomes gapped in the CDW state.
We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight binding calculations. All major spectral features corresponding to the expected interband transitions are identified
in the spectra: a strong peak due to transitions between parallel split-off bands and two onset-like features due to transitions between valence and conduction bands. A strong gate voltage dependence of these structures and a significant electron-hole asymmetry is observed that we use to extract several band parameters. Surprisingly, the structures related to the gate-induced bandgap are much less pronounced in the experiment than predicted by the tight binding model.
We report far-infrared reflectance measurements on polycrystalline superconducting samples of SmO$_{1-x}$F$_{x}$FeAs ($x$ = 0.12, 0.15 and 0.2). We clearly observe superconductivity induced changes of reflectivity in a broad range of energies, which
resembles earlier optical measurements on high $T_{c}$ cuprates. The superconducting-to-normal reflectivity ratio $R_{s}/R_{n}$ grows for the photon energies below 18 meV and shows a complicated structure due to the presence of a strong infrared-active phonon at about 10 meV.
We find experimentally that the optical sheet conductance of graphite per graphene layer is very close to $(pi/2)e^2/h$, which is the theoretically expected value of dynamical conductance of isolated monolayer graphene. Our calculations within the Sl
onczewski-McClure-Weiss model explain well why the interplane hopping leaves the conductance of graphene sheets in graphite almost unchanged for photon energies between 0.1 and 0.6 eV, even though it significantly affects the band structure on the same energy scale. The f-sum rule analysis shows that the large increase of the Drude spectral weight as a function of temperature is at the expense of the removed low-energy optical spectral weight of transitions between hole and electron bands.
