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In cubic noncentrosymmetric ferromagnets uniaxial distortions suppress the helical states and stabilize Skyrmion lattices in a broad range of thermodynamical parameters. Using a phenomenological theory for modulated and localized states in chiral mag nets, the equilibrium parameters of the Skyrmion and helical states are derived as functions of the applied magnetic field and induced uniaxial anisotropy. These results show that due to a combined effect of induced uniaxial anisotropy and an applied magnetic field Skyrmion lattices can be formed as thermodynamically stable states in large intervals of magnetic field and temperatures in cubic helimagnets, e.g., in intermetallic compounds MnSi, FeGe, (Fe,Co)Si. We argue that this mechanism is responsible for the formation of Skyrmion states recently observed in thin layers of Fe_{0.5}Co_{0.5}Si [X.Z.Yu et al., Nature textbf{465}(2010) 901].
The interplay between intrinsic and surface/interface-induced magnetic anisotropies strongly in- fluences magnetization processes in nanomagnetic systems. We develop a micromagnetic theory to describe the field-driven reorientation in nanomagnets wit h cubic and uniaxial anisotropies. Spin configurations in competing phases and parameters of accompanying multidomain states are calculated as functions of the applied field and the magnetic anisotropies. The constructed magnetic phase diagrams allow to classify different types of the magnetization reversal and to provide detailed analysis of the switching processes in magnetic nanostructures. The calculated magnetization profiles of isolated domain walls show that the equilibrium parameters of such walls are extremely sensitive to applied magnetic field and values of the competing anisotropies and can vary in a broad range. For nanolayers with perpendicular anisotropy the geometrical parameters of stripe domains have been calculated as functions of a bias field. The results are applied to analyse the magnetization processes as observed in various nanosystems with competing anisotropies, mainly, in diluted magnetic semiconductor films (Ga,Mn)As.
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