Two-Level Systems in Evaporated Amorphous Silicon

In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by over three orders of magnitude. Here we show that $n_{0}$ and $overline{P}$ are proportional to each other with a constant of proportionality that is consistent with the measurement time dependence proposed by Black and Halperin and does not require the introduction of additional anomalous TLS. However, $n_{0}$ and $overline{P}$ depend strongly on the atomic density of the film ($n_{rm Si}$) which depends on both film thickness and growth temperature suggesting that the $a$-Si structure is heterogeneous with nanovoids or other lower density regions forming in a dense amorphous network. A review of literature data shows that this atomic density dependence is not unique to $a$-Si. These findings suggest that TLS are not intrinsic to an amorphous network but require a heterogeneous structure to form.

Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6

The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priorities in the field is to search for new 2D crystalline systems with structural and electronic properties that can be exploited for device development. In this letter, we report on the unusual quantum transport properties of the 2D ternary transition metal chalcogenide - Nb3SiTe6. We show that the micaceous nature of Nb3SiTe6 allows it to be thinned down to one-unit-cell thick 2D crystals using microexfoliation technique. When the thickness of Nb3SiTe6 crystal is reduced below a few unit-cells thickness, we observed an unexpected, enhanced weak-antilocalization signature in magnetotransport. This finding provides solid evidence for the long-predicted suppression of electron-phonon interaction caused by the crossover of phonon spectrum from 3D to 2D.

Localized guided-mode and cavity-mode double resonance in photonic crystal nanocavities

We investigate the use of guided modes bound to defects in photonic crystals for achieving double resonances. Photoluminescence enhancement by more than three orders of magnitude has been observed when the excitation and emission wavelengths are simultaneously in resonance with the localized guided mode and cavity mode, respectively. We find that the localized guided modes are relatively insensitive to the size of the defect for one of the polarizations, allowing for flexible control over the wavelength combinations. This double resonance technique is expected to enable enhancement of photoluminescence and nonlinear wavelength conversion efficiencies in a wide variety of systems.

Reconstructed primary fragments and symmetry energy, temperature and density of the fragmenting source in $^{64}$Zn + $^{112}$Sn at 40 MeV/nucleon

Symmetry energy, temperature and density at the time of the intermediate mass fragment formation are determined in a self-consistent manner, using the experimentally reconstructed primary hot isotope yields and anti-symmetrized molecular dynamics (AMD) simulations. The yields of primary hot fragments are experimentally reconstructed for multifragmentation events in the reaction system $^{64}$Zn + $^{112}$Sn at 40 MeV/nucleon. Using the reconstructed hot isotope yields and an improved method, based on the modified Fisher model, symmetry energy values relative to the apparent temperature, $a_{sym}/T$, are extracted. The extracted values are compared with those of the AMD simulations, extracted in the same way as that for the experiment, with the Gogny interaction with three different density-dependent symmetry energy terms. $a_{sym}/T$ values change according to the density-dependent symmetry energy terms used. Using this relation, the density of the fragmenting system is extracted first. Then symmetry energy and apparent temperature are determined in a self consistent manner in the AMD model simulations. Comparing the calculated $a_{sym}/T$ values and those of the experimental values from the reconstructed yields, $rho /rho_{0} = 0.65 pm 0.02 $, $a_{sym} = 23.1 pm 0.6$ MeV and $T= 5.0 pm 0.4$ MeV are evaluated for the fragmenting system experimentally observed in the reaction studied.

Two-photon interference and coherent control of single InAs quantum dot emissions in an Ag-embedded structure

We have recently reported the successful fabrication of bright single-photon sources based on Ag-embedded nanocone structures that incorporate InAs quantum dots. The source had a photon collection efficiency as high as 24.6%. Here we show the results of various types of photonic characterizations of the Ag-embedded nanocone structures that confirm their versatility as regards a broad range of quantum optical applications. We measure the first-order autocorrelation function to evaluate the coherence time of emitted photons, and the second-order correlation function, which reveals the strong suppression of multiple photon generation. The high indistinguishability of emitted photons is shown by the Hong-Ou-Mandel-type two-photon interference. With quasi-resonant excitation, coherent population flopping is demonstrated through Rabi oscillations. Extremely high single-photon purity with a $g^{(2)}$(0) value of 0.008 is achieved with $pi$-pulse quasi-resonant excitation.

Experimental reconstruction of primary hot isotopes and characteristic properties of the fragmenting source in the heavy ion reactions near the Fermi energy

The characteristic properties of the hot nuclear matter existing at the time of fragment formation in the multifragmentation events produced in the reaction $^{64}$Zn + $^{112}$Sn at 40 MeV/nucleon are studied. A kinematical focusing method is employed to determine the multiplicities of evaporated light particles, associated with isotopically identified detected fragments. From these data the primary isotopic yield distributions are reconstructed using a Monte Carlo method. The reconstructed yield distributions are in good agreement with the primary isotope distributions obtained from AMD transport model simulations. Utilizing the reconstructed yields, power distribution, Landau free energy, characteristic properties of the emitting source are examined. The primary mass distributions exhibit a power law distribution with the critical exponent, $A^{-2.3}$, for $A geq 15$ isotopes, but significantly deviates from that for the lighter isotopes. Landau free energy plots show no strong signature of the first order phase transition. Based on the Modified Fisher Model, the ratios of the Coulomb and symmetry energy coefficients relative to the temperature, $a_{c}/T$ and $a_{sym}/T$, are extracted as a function of A. The extracted $a_{sym}/T$ values are compared with results of the AMD simulations using Gogny interactions with different density dependencies of the symmetry energy term. The calculated $a_{sym}/T$ values show a close relation to the symmetry energy at the density at the time of the fragment formation. From this relation the density of the fragmenting source is determined to be $rho /rho_{0} = (0.63 pm 0.03 )$. Using this density, the symmetry energy coefficient and the temperature of fragmenting source are determined in a self-consistent manner as $a_{sym} = (24.7 pm 3.4) MeV$ and $T=(4.9 pm 0.2)$ MeV.

High-performance bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the charge accumulation and yielding high carrier mobility. A thick layer of InZnO controls the charge conductance resulting in low off-state current and suitable threshold voltage. As a consequence, the BMO TFT showed higher filed-effect mobility (37.9 cm2/V s) than single-layer InZnO TFT (7.6 cm2/V s). More importantly, an on/off current ratio of 109, a subthreshold swing voltage of 120 mV/decade, as well as a threshold voltage shift (less than 0.4 V) under bias stress for 2.5 hours were obtained simultaneously. These promising properties are obtained at a low operation voltage of 3 V. This work demonstrates that the BMO TFT has great potential applications as switching transistor and low-power devices.

A novel determination of density, temperature and symmetry energy for nuclear multi-fragmentation through primary fragment yield reconstruction

For the first time primary hot isotope distributions are experimentally reconstructed in intermediate heavy ion collisions and used with antisymmetrized molecular dynamics (AMD) calculations to determine density, temperature and symmetry energy coefficient in a self-consistent manner. A kinematical focusing method is employed to reconstruct the primary hot fragment yield distributions for multifragmentation events observed in the reaction system $^{64}$Zn + $^{112}$Sn at 40 MeV/nucleon. The reconstructed yield distributions are in good agreement with the primary isotope distributions of AMD simulations. The experimentally extracted values of the symmetry energy coefficient relative to the temperature, $a_{sym}/T$, are compared with those of the AMD simulations with different density dependence of the symmetry energy term. The calculated $a_{sym}/T$ values changes according to the different interactions. By comparison of the experimental values of $a_{sym}/T$ with those of calculations, the density of the source at fragment formation was determined to be $rho /rho_{0} = (0.63 pm 0.03 )$. Using this density, the symmetry energy coefficient and the temperature are determined in a self-consistent manner as $a_{sym} = (24.7 pm 1.9) MeV$ and $T=(4.9 pm 0.2)$ MeV

Ferromagnetic Exchange Anisotropy from Antiferromagnetic Superexchange in the Mixed 3d-5d Transition-Metal Compound Sr3CuIrO6

We report a combined experimental and theoretical study of the unusual ferromagnetism in the one-dimensional copper-iridium oxide Sr$_3$CuIrO$_6$. Utilizing Ir $L_3$ edge resonant inelastic x-ray scattering, we reveal a large gap magnetic excitation spectrum. We find that it is caused by an unusual exchange anisotropy generating mechanism, namely, strong ferromagnetic anisotropy arising from antiferromagnetic superexchange, driven by the alternating strong and weak spin-orbit coupling on the $5d$ Ir and 3d Cu magnetic ions, respectively. From symmetry consideration, this novel mechanism is generally present in systems with edge-sharing Cu$^{2+}$O$_4$ plaquettes and Ir$^{4+}$O$_6$ octahedra. Our results point to unusual magnetic behavior to be expected in mixed 3d-5d transition-metal compounds via exchange pathways that are absent in pure 3d or 5d compounds.

Response to the comment of K.W. Edmonds et al. on the article Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band

Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form.