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Control of Plasmons in Doped Topological Insulators via Basis Atoms

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 Added by Zhihao Jiang
 Publication date 2021
  fields Physics
and research's language is English




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Collective excitations in topologically non-trivial systems have attracted considerable attention in recent years. Here we study plasmons in the Su-Schrieffer-Heeger model whose low-energy electronic band is only partially filled, such that the system is metallic. Using the random phase approximation, we calculate the intra- and inter-band polarization functions and determine the bulk plasmonic dispersion from the dielectric function within the random phase approximation. We find that the sub-lattice basis states strongly affect the polarization functions and therefore control the systems plasmonic excitations. By varying the real-space separation of these local orbitals, one can thus selectively enhance or suppress the plasmonic energies via a tunable trade-off between intra-band and inter-band screening processes. Specifically, this mechanism can be used to stabilize undamped high energy plasmons that have already been reported in related models. We propose scenarios on how to control and observe these effects in experiments.



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We use a fully quantum mechanical approach to demonstrate control of plasmonic excitations in prototype models of topological insulators by molecule-scale perturbations. Strongly localized surface plasmons are present in the host systems, arising from the topologically non-trivial single-particle edge states. A numerical evaluation of the RPA equations for the perturbed systems reveals how the positions and the internal electronic structure of the added molecules affect the degeneracy of the locally confined collective excitations, i.e., shifting the plasmonic energies of the host system and changing their spatial charge density profile. In particular, we identify conditions under which significant charge transfer from the host system to the added molecules occurs. Furthermore, the induced field energy density in the perturbed topological systems due to external electric fields is determined.
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