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Engineering Three Dimensional Moire Flat Bands

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 Added by Ammon Fischer
 Publication date 2020
  fields Physics
and research's language is English




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We demonstrate that the concept of moire flat bands can be generalized to achieve electronic band engineering in all three spatial dimensions. For many two dimensional van der Waals materials, twisting two adjacent layers with respect to each other leads to flat electronic bands in the two corresponding spatial directions -- a notion sometimes referred to as twistronics as it enables a wealth of physical phenomena. Within this two dimensional plane, large moire patterns of nanometer size form. The basic concept we propose here is to stack multiple twisted layers on top of each other in a predefined pattern. If the pattern is chosen such that with respect to the stacking direction of layers, the large spatial moire features are spatially shifted from one twisted layer to the next, the system exhibits twist angle controlled flat bands in all of the three spatial directions. With this, our proposal extends the use of twistronic to three dimensions. We exemplify the general concept by considering graphitic systems, boron nitride and WSe$_2$ as candidate materials, but the approach is applicable to any two-dimensional van der Waals material. For hexagonal boron nitride we develope an ab initio fitted tight binding model that captures the corresponding three dimensional low-energy electronic structure. We outline that interesting three dimensional correlated phases of matter can be induced and controlled following this route, including quantum magnets and unconventional superconducting states.



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We investigate the chirality of phonon modes in twisted bilayer WSe2. We demonstrate distinct chiral behavior of the K/K valley phonon modes for twist angles close to 0 degrees and close to 60 degrees. Moreover, we discover two sets of well-separated chiral valley modes in moire lattices for angles close to 60 degrees. These emergent moire chiral valley phonons originate from inversion symmetry breaking at the moire scale. We also find similar emergent chiral modes in moire patterns of strain-engineered bilayer WSe2 and MoSe2/WSe2 heterostructure. Furthermore, we observe the flattening of bands near the phononic band-gap edges for a broad range of twist angles in twisted bilayer WSe2. Our findings, which are expected to be generic for moire systems composed of two-dimensional materials that break inversion symmetry, are relevant for understanding electron-phonon and exciton-phonon scattering, and for designing phononic crystals to mimic behaviors of electrons in moire materials.
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