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Register a new userEngineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials
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One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mott insulator Sr2IrO4 and a wide bandgap insulator LaSrGaO4, both of which are crystals with layered structure. In addition to the successful formation of 1D Ir-stripe structure, we have observed 1D quantum-confined electronic states from optical spectroscopy and resonant inelastic x-ray scattering. Since this 1D superlattice approach can be applied to a wide range of layered materials, it opens a new era of 1D science.
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Symmetry breaking in two-dimensional layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including but not limited to spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose-Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of two-dimensional layered materials not only offers extraordinary opportunities to tune their physical properties, but also provides unprecedented possibilities to introduce completely new physics and technological innovations in electronics, photonics and optoelectronics. Indeed, over the past 15 years, a wide variety of physical, structural and chemical approaches have been developed to engineer symmetry breaking of two-dimensional layered materials. In this Review, we focus on the recent progresses on engineering the breaking of inversion, rotational, time reversal and spontaneous gauge symmetries in two-dimensional layered materials, and illustrate our perspectives on how these may lead to potential new physics and applications.
Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report the realization of robust memristors for the first time based on van der Waals heterostructure of fully layered 2D materials (graphene/MoS2-xOx/graphene) and demonstrate a good thermal stability lacking in traditional memristors. Such devices have shown excellent switching performance with endurance up to 107 and a record-high operating temperature up to 340oC. By combining in situ high-resolution TEM and STEM studies, we have shown that the MoS2-xOx switching layer, together with the graphene electrodes and their atomically sharp interfaces, are responsible for the observed thermal stability at elevated temperatures. A well-defined conduction channel and a switching mechanism based on the migration of oxygen ions were also revealed. In addition, the fully layered 2D materials offer a good mechanical flexibility for flexible electronic applications, manifested by our experimental demonstration of a good endurance against over 1000 bending cycles. Our results showcase a general and encouraging pathway toward engineering desired device properties by using 2D van der Waals heterostructures.
Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. While extrinsic mechanisms can in general be minimized by improving fabrication processes, the suppression of intrinsic scattering (driven e.g. by electron-phonon interactions) requires to modify the electronic or vibrational properties of the material. Since intervalley scattering critically affects mobilities, a powerful approach to enhance transport performance relies on engineering the valley structure. We show here the power of this strategy using uniaxial strain to lift degeneracies and suppress scattering into entire valleys, dramatically improving performance. This is shown in detail for arsenene, where a 2% strain stops scattering into 4 of the 6 valleys, and leads to a 600% increase in mobility. The mechanism is general and can be applied to many other materials, including in particular the isostructural antimonene and blue phosphorene.
The growing library of two-dimensional layered materials is providing researchers with a wealth of opportunity to explore and tune physical phenomena at the nanoscale. Here, we review the experimental and theoretical state-of-art concerning the electron spin dynamics in graphene, silicene, phosphorene, transition metal dichalcogenides, covalent heterostructures of organic molecules and topological materials. The spin transport, chemical and defect induced magnetic moments, and the effect of spin-orbit coupling and spin relaxation, are also discussed in relation to the field of spintronics.
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since the Coulomb interaction is responsible for the insulating state of Mott materials, dielectric screening provides direct access to the Mottness. Our many-body calculations reveal the spectroscopic fingerprints of Coulomb engineering. We demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on this theoretical analysis, we discuss prerequisites for an effective experimental realization of Coulomb engineering.
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