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Register a new userEnhancing single photon emission through quasi-bound states in the continuum of monolithic hexagonal boron nitride metasurface
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A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3*10^4) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.
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Quantum emitters in van der Waals (vdW) materials have attracted lots of attentions in recent years, and shown great potentials to be fabricated as quantum photonic nanodevices. Especially, the single photon emitter (SPE) in hexagonal boron nitride (hBN) emerges with the outstanding room-temperature quantum performances, whereas the ubiquitous blinking and bleaching restrict its practical applications and investigations critically. The bubble in vdW materials exhibits the stable structure and can modify the local bandgap by strains on nanoscale, which is supposed to have the ability to fix this photostability problem. Here we report a bubble-induced high-purity SPE in hBN under ambient conditions showing stable quantum-emitting performances, and no evidence of blinking and bleaching for one year. Remarkably, we observe the nontrivial successive activating and quenching dynamical process of the fluorescent defects at the SPE region under low pressures for the first time, and the robust recoverability of the SPE after turning back to the atmospheric pressure. The pressure-tuned performance indicates the SPE origins from the lattice defect isolated and activated by the local strain induced from the bubble, and sheds lights on the future high-performance quantum sources based on hBN.
Metasurface-mediated bound states in the continuum (BIC) provides a versatile platform for light manipulation at subwavelength dimension with diverging radiative quality factor and extreme optical localization. In this work, we employ magnetic dipole quasi-BIC resonance in asymmetric silicon nanobar metasurfaces to realize giant Goos-Hanchen (GH) shift enhancement by more than three orders of wavelength. In sharp contrast to GH shift based on the Brewster dip or transmission-type resonance, the maximum GH shift here is located at the reflection peak with unity reflectance, which can be conveniently detected in the experiment. By adjusting the asymmetric parameter of metasurfaces, the $Q$-factor and GH shift can be modulated accordingly. More interestingly, it is found that GH shift exhibits an inverse quadratic dependence on the asymmetric parameter. Furthermore, we design an ultrasensitive environmental refractive index sensor based on the quasi-BIC enhanced GH shift, with a maximum sensitivity of 1.5$times$10$^{7}$ $mu$m/RIU. Our work not only reveals the essential role of BIC in engineering the basic optical phenomena, but also suggests the way for pushing the performance limits of optical communication devices, information storage, wavelength division de/multiplexers, and ultrasensitive sensors.
Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprised of Ar plasma etching and subsequent annealing in Ar is highly robust, and yields a seven-fold increase in the concentration of emitters in hBN. The initial plasma etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature and have an emission energy distribution that is red-shifted relative to that of pristine hBN. An analysis of emitters fabricated by a range of plasma and annealing treatments, combined with a theoretical investigation of point defects in hBN indicates that single photon emitters characterized by a high degree of photostability and emission wavelengths greater than ~700 nm are associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters by annealing hBN in an oxidative atmosphere. Our findings advance present understanding of the structure of quantum emitter in hBN and enhance the nanofabrication toolkit that is needed to realize integrated quantum nanophotonics based on 2D materials.
Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that the all monolithic hBN cavity system exhibits an order of magnitude enhancement in the emission of the coupled boron vacancy spin defects. In addition, by comparative finite difference time domain modelling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal to noise ratio. Thus, our experimental results supported by simulations, constitute a first step towards integration of hBN spin defects with photonic resonators for a scalable spin photon interface.
Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that is emerging as a powerful platform for quantum optics and nanophotonics. In this work, we demonstrate whispering gallery mode silica microresonators hybridized with thin layers of epitaxially grown hBN that exhibit high optical quality factor $> 7 times 10^5$. Measurements of the effect of hBN thickness on optical $Q$ and comparison with a theoretical model allows the linear optical absorption coefficient of the hBN films to be estimated. These high-$Q$ devices will be useful for applications in quantum and nonlinear optics, and their hybridized geometry provides a sensitive platform for evaluating losses in hBN and other 2D materials.
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