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Register a new userRole of magnetic exchange interactions in chiral-type Hall effects of epitaxial Mn$_{x}$PtSn films
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Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputtering. The competition of the magnetic exchange interactions determines the finite temperature magnetic texture and thereby the chiral-type Hall effects in external magnetic fields. We investigate the magnetic and transport properties as a function of magnetic field and temperature. We focus on the anomalous and chiral-type Hall effects and the behavior of the dc-magnetization, in relation to chiral spin textures. We further determine the stable crystal phase for a relative Mn concentration between 1.5 and 1.85 in the $Ioverline{4}2d$ structure. We observe a spin-reorientation transition in all compounds studied, which is due to the competition of exchange interactions on different Mn sublattices. We discuss our results in terms of exchange interactions and compare them with theoretical atomistic spin calculations.
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Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D0$_{19}$ Mn$_3$Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn$_3$Ge films is estimated to be 0.1 $mu$V / K, and is comparable to that in ferromagnetic Fe, despite Mn$_3$Ge having a weak magnetization of ~3.5 m$mu_B$ at room temperature. The spin mixing conductance is 90.5 nm$^{-2}$ at the Py / Mn$_3$Ge interface, and the spin-Hall angle in Mn$_3$Ge is estimated to be about 8 times of that in Pt.
The composition dependence of the structural, magnetic, and transport properties of epitaxially grown Mn-Co-Ga films were investigated. The crystal structure was observed to change from tetragonal to cubic as the Co content was increased. In terms of the dependence of saturation magnetization on the Co content, relatively small value was obtained for the Mn$_{2.3}$Co$_{0.4}$Ga$_{1.3}$ film at a large {it K}$_textrm u$ value of 9.2 Merg/cm$^3$. Electrical resistivity of Mn-Co-Ga films was larger than that of pure Mn-Ga film. The maximum value of the resistivity was 490 $muOmega$cm for Mn$_{2.2}$Co$_{0.6}$Ga$_{1.2}$ film. The high resistivity of Mn-Co-Ga might be due to the presence of localized electron states in the films due to chemical disordering caused by the Co substitution.
We study anomalous Hall conductivity ($sigma$$_{rm AHC}$) and electronic band structures of Si-substituted Mn$_{2}$CoAl (Mn$_{2}$CoAl$_{1-x}$Si$_{x}$). First-principles calculations reveal that the electronic band structure is like a spin-gapless system even after substituting a quaternary element of Si for Al up to $x = $0.2 in Mn$_{2}$CoAl$_{1-x}$Si$_{x}$. This means that the Si substitution enables the Fermi level shift without largely changing the electronic structures in Mn$_{2}$CoAl. By using molecular beam epitaxy (MBE) techniques, Mn$_{2}$CoAl$_{1-x}$Si$_{x}$ epitaxial films can be grown, leading to the systematic control of $x$ (0 $le$ $x$ $le$ 0.3). In addition to the electrical conductivity, the values of $sigma$$_{rm AHC}$ for the Mn$_{2}$CoAl$_{1-x}$Si$_{x}$ films are similar to those in Mn$_{2}$CoAl films shown in previous reports. We note that a very small $sigma$$_{rm AHC}$ of $sim$ 1.1 S/cm is obtained for $x =$ 0.225 and the sign of $sigma$$_{rm AHC}$ is changed from positive to negative at around $x =$ 0.25. We discuss the origin of the sign reversal of $sigma$$_{rm AHC}$ as a consequence of the Fermi level shift in MCA. Considering the presence of the structural disorder in the Mn$_{2}$CoAl$_{1-x}$Si$_{x}$ films, we can conclude that the small value and sign reversal of $sigma$$_{rm AHC}$ are not related to the characteristics of spin-gapless semiconductors.
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic ${gamma}$-Mn$_{3}$Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 11.5 nJ cm$^{-2}$) measured in Mn$_{3}$Ir (111) / permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn$_{3}$Ir (001) / Py bilayers is observed. These findings are discussed in the context of chiral antiferromagnetic domain structures, and will inform progress towards topological antiferromagnetic spintronic devices.
Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the crystallographic D0$_{22}$ phase. The Hall resistivity $varrho_{xy}$ was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties.
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