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First-principles study of ultrafast dynamics of Dirac plasmon in graphene

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 Added by Dino Novko
 Publication date 2020
  fields Physics
and research's language is English
 Authors Dino Novko




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Exploring low-loss two-dimensional plasmon modes is considered central for achieving light manipulation at the nanoscale and applications in plasmonic science and technology. In this context, pump-probe spectroscopy is a powerful tool for investigating these collective modes and the corresponding energy transfer processes. Here, I present a first-principles study on non-equilibrium Dirac plasmon in graphene, wherein damping channels under ultrafast conditions are still not fully explored. The laser-induced blueshift of plasmon energy is explained in terms of thermal increase of the electron-hole pair concentration in the intraband channel. Interestingly, while damping pathways of the equilibrium graphene plasmon are entirely ruled by scatterings with acoustic phonons, the photoinduced plasmon predominantly transfers its energy to the strongly coupled hot optical phonons, which explains the experimentally-observed tenfold increase of the plasmon linewidth. The present study paves the way for an in-depth theoretical comprehension of plasmon temporal dynamics in novel two-dimensional systems and heterostructures.



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Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gaps effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.
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Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging the valence and the conduction band changes the number of charge carriers and gives rise to a significant carrier multiplication - an ultrafast many-particle phenomenon that is promising for the design of highly efficient photodetectors. Furthermore, the vanishing density of states at the Dirac point combined with ultrafast phonon-induced intraband scattering results in an accumulation of carriers and a population inversion suggesting the design of graphene-based terahertz lasers. Here, we review our work on the ultrafast carrier dynamics in graphene and Landau-quantized graphene is presented providing a microscopic view on the appearance of carrier multiplication and population inversion.
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