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Register a new userRole of intermediate 4$f$ states in tuning the band structure of high entropy oxides
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High entropy oxides (HEOs) are single phase solid solutions consisting of 5 or more cations in approximately equiatomic proportions. In this study, we show reversible control of optical properties in a rare-earth (RE) based HEO-(Ce$_{0.2}$La$_{0.2}$Pr$_{0.2}$Sm$_{0.2}$Y$_{0.2}$)O$_{2-delta}$ and subsequently utilize a combination of spectroscopic techniques to derive the features of the electronic band structure underpinning the observed optical phenomena. Heat treatment of the HEO under vacuum atmosphere followed by reheat-treatment in air results in a reversible change of the band gap energy, from 1.9 eV to 2.5 eV. The finding is consistent with the reversible changes in the oxidation state and related $f$-orbital occupancy of Pr. However, no pertinent changes in the phase composition or crystal structure is observed upon the vacuum heat treatment. Further annealing of this HEO under H$_2$ atmosphere, followed by reheat-treatment in air, results in even larger but still reversible change of the band gap energy from 1.9 eV to 3.2 eV. This is accompanied by a disorder-order type crystal structure transition and changes in the O 2$p$-RE 5$d$ hybridization evidenced from X-ray absorption near edge spectra (XANES). The O $K$ and RE ${M_{4,5}}$/$L_{3}$ XANES indicate that the presence of Ce and Pr (in 3+/4+) state leads to the formation of intermediate 4$f$ energy levels between the O 2$p$ and RE 5$d$ gap in HEO. It is concluded that heat treatment under reducing/oxidizing atmospheres affects these intermediate levels, thus, offering the possibility to tune the band gap energy in HEO.
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High entropy oxides (HEOs) are a rapidly emerging class of chemically complex functional materials. The original paradigm of HEOs assumes cationic occupations with the highest possible configurational entropy allowed by the composition and crystallographic structure. However, the fundamental question remains on the actual degree of configurational disorder and its subsequent stabilizing role in HEOs. Considering the experimental limitations due to the inherent chemical complexity of HEOs, here we utilize a robust and cross-referenced characterization approach using soft X-ray magnetic circular dichroism, hard X-ray absorption spectroscopy, Mossbauer spectroscopy, neutron powder diffraction and SQUID magnetometry to study the competition between enthalpy and configurational entropy on a lattice level in a model spinel HEO (S-HEO), (Co$_{0.2}$Cr$_{0.2}$Fe$_{0.2}$Mn$_{0.2}$Ni$_{0.2}$)$_3$O$_4$. In contrast to the previous studies, the derived complete structural and spin-electronic model, (Co$_{0.6}$Fe$_{0.4}$)(Cr$_{0.3}$Fe$_{0.1}$Mn$_{0.3}$Ni$_{0.3}$)$_2$O$_4$, highlights a significant deviation from the hitherto assumed paradigm of entropy-driven non-preferential distribution of cations in HEOs. An immediate correlation of this result can be drawn with bulk as well as the local element specific magnetic properties, which are intrinsically dictated by cationic occupations in spinels. The real local lattice picture presented here provides an alternate viewpoint on ionic arrangement in HEOs, which is of fundamental interest for predicting and designing their structure-dependent functionalities.
The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional methods including the modified Becke-Johnson functional to correctly reproduce the band gap, and band unfolding to reveal the character of the bands within the entire Brillouin zone. As expected, relatively small amounts of nitrogen introduced to Ga(PAs) lead to formation of an intermediate band below the conduction band which is consistent with the band anticrossing model, widely used to describe the electronic band structure of dilute nitrides. However, in this study calculations are performed in the whole Brillouin zone and reveal the significance of correct description of the band structure near the edges of Brillouin zone, especially for indirect band gap P-rich host alloy, which may not be properly captured with simpler models. The theoretical results are compared with experimental studies, confirming their reliability. The influence of nitrogen on the band structure is discussed in terms of application of Ga(PAsN) in optoelectronic devices such as intermediate band solar cells and light emitters. It is found that Ga(PAsN) with low N and As concentration has a band structure suitable for integration in Si tandem solar cells, since the lattice mismatch between Si and Ga(PAsN) is small in this case. Moreover, it is concluded that P-rich Ga(PAsN) alloys with low N concentration have a promising band structure for two colour emitters. Additionally, the effect of nitrogen incorporation on the carrier localization is studied and discussed.
The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and oxygen deficient In$_2$O$_3$, $alpha$- and $beta$-Ga$_2$O$_3$, rock salt and wurtzite ZnO, and layered InGaZnO$_4$ reveals the role of the following factors which govern the transport and optical properties of these TCO materials: (i) the crystal symmetry of the oxides, including both the oxygen coordination and the long-range structural anisotropy; (ii) the electronic configuration of the cation(s), specifically, the type of orbital(s) -- $s$, $p$ or $d$ -- which form the conduction band; and (iii) the strength of the hybridization between the cations states and the p-states of the neighboring oxygen atoms. The results not only explain the experimentally observed trends in the electrical conductivity in the single-cation TCO, but also demonstrate that multicomponent oxides may offer a way to overcome the electron localization bottleneck which limits the charge transport in wide-bandgap main-group metal oxides. Further, the advantages of aliovalent substitutional doping -- an alternative route to generate carriers in a TCO host -- are outlined based on the electronic band structure calculations of Sn, Ga, Ti and Zr-doped InGaZnO$_4$. We show that the transition metal dopants offer a possibility to improve conductivity without compromising the optical transmittance.
We present a detailed study of the low temperature and high magnetic field phases in the chemical substitution series URu$_2$Si$_{2-x}$P$_x$ using electrical transport and magnetization in pulsed magnetic fields up to 65T. Within the hidden order region (0 $ x$$ $ 0.035) the high field ordering is robust even as the hidden order temperature is suppressed. Earlier work shows that for 0.035 $ x$ $ $ 0.26 there is a Kondo lattice with a no-ordered state that is replaced by antiferromagnetism for 0.26 $ x$ 0.5. We observe a simplified continuation of the high field ordering in the no-order $x$-region and an enhancement of the high field state upon the destruction of the antiferromagnetism with magnetic field. These results closely resemble what is seen for URu$_{2-x}$Rh$_x$Si$_2$footnote{The concentration in this paper is defined as URu$_{2-x}$Rh$_x$Si$_2$ while the chemical formula in the literature is given as U(Ru$_{1-x}$Rh$_x$)$_2$Si$_2$ [24-26]}, from which we infer that charge tuning uniformly controls the ground state of URu$_2$Si$_2$, regardless of whether s/p or d-electrons are replaced. This provides guidance for determining the specific factors that lead to hidden order versus magnetism in this family of materials.
We have systematically investigated substrate-strain effects on the electronic structures of two representative Sr-iridates, a correlated-insulator Sr$_2$IrO$_4$ and a metal SrIrO$_3$. Optical conductivities obtained by the emph{ab initio} electronic structure calculations reveal that the tensile strain shifts the optical peak positions to higher energy side with altered intensities, suggesting the enhancement of the electronic correlation and spin-orbit coupling (SOC) strength in Sr-iridates. The response of the electronic structure upon tensile strain is found to be highly correlated with the direction of magnetic moment, the octahedral connectivity, and the SOC strength, which cooperatively determine the robustness of $J_{eff}$=1/2 ground states. Optical responses are analyzed also with microscopic model calculation and compared with corresponding experiments. In the case of SrIrO$_3$, the evolution of the electronic structure near the Fermi level shows high tunability of hole bands, as suggested by previous experiments.
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