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Register a new userElectrostatic potential shape of gate defined quantum point contacts
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Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and compare our findings with models of lateral parabolic versus hard wall confinement. We find that a gate-defined QPC near pinch-off is compatible with the parabolic saddle point scenario. However, as the number of populated subbands is increased Coulomb screening flattens the potential bottom and a description in terms of a finite hard wall potential becomes more realistic.
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We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor $|g_{parallel}^* | approx$ 40. The out-of-plane g factor is measured to be $|g_{perp}^* | approx$ 50, which is close to the g factor in the bulk.
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