No Arabic abstract
Oxygen defects govern the behavior of a range of materials spanning catalysis, quantum computing, and nuclear energy. Understanding and controlling these defects is particularly important for the safe use, storage, and disposal of actinide oxides in the nuclear fuel cycle, since their oxidation state influences fuel lifetimes, stability, and the contamination of groundwater. However, poorly understood nanoscale fluctuations in these systems can lead to significant deviations from bulk oxidation behavior. Here we describe the first use of aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy to resolve changes in the local oxygen defect environment in UO$_2$ surfaces. We observe large image contrast and spectral changes that reflect the presence of sizable gradients in interstitial oxygen content at the nanoscale, which we quantify through first principles calculations and image simulations. These findings reveal an unprecedented level of excess oxygen incorporated in a complex near-surface spatial distribution, offering new insight into defect formation pathways and kinetics during UO$_2$ oxidation.
The iron(III) center in ferroelectric PbTiO3 together with an oxygen vacancy forms a charged defect associate, oriented along the crystallographic c-axis. Its microscopic structure has been analyzed in detail comparing results from a semi-empirical Newman superposition model analysis based on finestructure data and from calculations using density functional theory. Both methods give evidence for a substitution of Fe3+ for Ti4+ as an acceptor center. The position of the iron ion in the ferroelectric phase is found to be similar to the B-site in the paraelectric phase. Partial charge compensation is locally provided by a directly coordinated oxygen vacancy. Using high-resolution synchrotron powder diffraction, it was verified that lead titanate remains tetragonal down to 12 K, exhibiting a c/a-ratio of 1.0721.
The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.
We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. Scanning Probe Microscope (SPM) has been utilized to investigate the ion implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP surface. The density, height and size of the nanostructures have been investigated here as a function of ion fluence. The rms surface roughness, of the ion implanted InP surfaces, demonstrates two varied behaviors as a function of Sb ion fluence. Initially, the roughness increases with increasing fluence. However, after a critical fluence the roughness decreases with increasing fluence. We have further applied the technique of Raman scattering to investigate the implantation induced modifications and disorder in InP. Raman Scattering results demonstrate that at the critical fluence, where the decrease in surface roughness occurs, InP lattice becomes amorphous.
Defects in semiconductors can exhibit multiple charge states, which can be used for charge storage applications. Here we consider such charge storage in a series of oxygen deficient phases of TiO$_2$, known as Magneli phases. These Ti$_n$O$_{2n-1}$ Magneli phases present well-defined crystalline structures, i. e., their deviation from stoichiometry is accommodated by changes in space group as opposed to point defects. We show that these phases exhibit intermediate bands with the same electronic quadruple donor transitions akin to interstitial Ti defect levels in TiO$_2$-rutile. Thus, the Magneli phases behave as if they contained a very large pseudo-defect density: $frac{1}{2}$ per formula unit Ti$_n$O$_{2n-1}$. Depending on the Fermi Energy the whole material will become charged. These crystals are natural charge storage materials with a storage capacity that rivals the best known supercapacitors.
In the field of atomically thin 2D materials, oxides are relatively unexplored in spite of the large number of layered oxide structures amenable to exfoliation. There is an increasing interest in ultra-thin film oxide nanostructures from applied points of view. In this perspective paper, recent progress in understanding the fundamental properties of 2D oxides is discussed. Two families of 2D oxides are considered: (1) van der Waals bonded layered materials in which the transition metal is in its highest valence state (represented by V$_2$O$_5$ and MoO$_3$) and (2) layered materials with ionic bonding between positive alkali cation layers and negatively charged transition metal oxide layers (LiCoO$_2$). The chemical exfoliation process and its combinaton with mechanical exfoliation are presented for the latter. Structural phase stability of the resulting nanoflakes, the role of cation size and the importance of defects in oxides are discussed. Effects of two-dimensionality on phonons, electronic band structures and electronic screening are placed in the context of what is known on other 2D materials, such as transition metal dichalcogenides. Electronic structure is discussed at the level of many-body-perturbation theory using the quasiparticle self-consistent $GW$ method, the accuracy of which is critically evaluated including effects of electron-hole interactions on screening and electron-phonon coupling. The predicted occurence of a two-dimensional electron gas on Li covered surfaces of LiCoO$_2$ and its relation to topological aspects of the band structure and bonding is presented as an example of the essential role of the surface in ultrathin materials. Finally, some case studies of the electronic transport and the use of these oxides in nanoscale field effect transistors are presented.