Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userThe role of defects in the metal-insulator transition in VO$_{2}$ and V$_2$O$_3$
81
0
0.0
(
0
)
Added by
Darshana Wickramaratne
Publication date
2019
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
The vanadates VO$_2$ and V$_2$O$_3$ are prototypical examples of strongly correlated materials that exhibit a metal-insulator transition. While the phase transitions in these materials have been studied extensively, there is a limited understanding of how the properties of these materials are affected by the presence of defects and doping. In this study we investigate the impact of native point defects in the form of Frenkel defects on the structural, magnetic and electronic properties of VO$_2$ and V$_2$O$_3$, using first-principles calculations. In VO$_2$ the vanadium Frenkel pairs lead to a non-trivial insulating state. The unpaired vanadium interstitial bonds to a single dimer, which leads to a trimer that has one singlet state and one localized single-electron $S=1/2$ state. The unpaired broken dimer created by the vanadium vacancy also has a localized $S=1/2$ state. Thus, the insulating state is created by the singlet dimers, the trimer and the two localized $S=1/2$ states. Oxygen Frenkel pairs, on the other hand, lead to a metallic state in VO$_2$, but are expected to be present in much lower concentrations. In contrast, the Frenkel defects in V$_2$O$_3$ do not directly suppress the insulating character of the material. However, the disorder created by defects in V$_2$O$_3$ alters the local magnetic moments and in turn reduces the energy cost of a transition between the insulating and conducting phases of the material. We also find self-trapped small polarons in V$_2$O$_3$, which has implications for transport properties in the insulating phase.
rate research
Read More
Metal-ion doping can effectively regulate the metal-insulator transition temperature in $mathrm{VO}_2$. Experiments found that the pentavalent and hexavalent ion doping dramatically reduces the transition temperature while the trivalent ion doping increases the transition temperature and induces intermediate phases. Based on the phase-field model of the metal-insulator transition in $mathrm{VO}_2$ we developed previously, we formulate a Landau potential of the metal-ion-doped $mathrm{VO}_2$ taking account of the effects of doping on the electron correlation and lattice structure. The effect of metal-ion doping on the lattice structure is accounted for in a phenomenological way. Using the Landau potential, we calculate the temperature-dopant-concentration phase diagrams of $mathrm{VO}_2$ doped with various metal ions consistent with the experiments and provide explanation to the different behaviors of different metal-ion doping. The phenomenological theory can provide estimations of phase diagrams of $mathrm{VO}_2$ doped with other metal ions.
Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} sim 340K$. It has been experimentally shown that one can control this transition by doping VO$_2$. In particular, doping with oxygen vacancies ($V_O$) has been shown to completely suppress this MIT {em without} any structural transition. We explain this suppression by elucidating the influence of oxygen-vacancies on the electronic-structure of the metallic $R$ phase VO$_2$, explicitly treating strong electron-electron correlations using dynamical mean-field theory (DMFT) as well as diffusion Monte Carlo (DMC) flavor of quantum Monte Carlo (QMC) techniques. We show that $V_O$s tend to change the V-3$d$ filling away from its nominal half-filled value, with the $e_{g}^{pi}$ orbitals competing with the otherwise dominant $a_{1g}$ orbital. Loss of this near orbital polarization of the $a_{1g}$ orbital is associated with a weakening of electron correlations, especially along the V-V dimerization direction. This removes a charge-density wave (CDW) instability along this direction above a critical doping concentration, which further suppresses the metal-insulator transition. Our study also suggests that the MIT is predominantly driven by a correlation-induced CDW instability along the V-V dimerization direction.
We have studied the [100]-[110] anisotropy of the Compton profile in the bilayer manganite. Quantitative agreement is found between theory and experiment with respect to the anisotropy in the two metallic phases (i.e. the low temperature ferromagnetic and the colossal magnetoresistant phase under a magnetic field of 7 T). Robust signatures of the metal-insulator transition are identified in the momentum density for the paramagnetic phase above the Curie temperature. We interpret our results as providing direct evidence for the transition from the metallic-like to the admixed ionic-covalent bonding accompanying the magnetic transition. The number of electrons involved in this phase transition is estimated from the area enclosed by the Compton profile anisotropy differences. Our study demonstrates the sensitivity of the Compton scattering technique for identifying the number and type of electrons involved in the metal-insulator transition.
As a member of the Ruddlesden-Popper Ln$_{n+1}$Ni$_n$O$_{3n+1}$ series rare-earth-nickelates, the Pr4Ni$_3$O$_{10}$ consists of infinite quasi-two-dimensional perovskite-like Ni-O based layers. Although a metal-to-metal phase transition at Tpt = 157 K has been revealed by previous studies, a comprehensive study of physical properties associated with this transition has not yet been performed. We have grown single crystals of Pr4Ni3O10 at high oxygen pressure, and report on the physical properties around that phase transition, such as heat-capacity, electric-transport and magnetization. We observe a distinctly anisotropic behavior between in-plane and out-of-plane properties: a metal-to-metal transition at Tpt within the a-b plane, and a metal-to-insulator-like transition along the c-axis with decreasing temperature. Moreover, an anisotropic and anomalous negative magneto-resistance is observed at Tpt that we attribute to a slight suppression of the first-order transition with magnetic field. The magnetic-susceptibility can be well described by a Curie-Weiss law, with different Curie-constants and Pauli-spin susceptibilities between the high-temperature and the low-temperature phases. The single crystal X-ray diffraction measurements show a shape variation of the different NiO6 octahedra from the high-temperature phase to the low-temperature phase. This subtle change of the environment of the Ni sites is likely responsible for the different physical properties at high and low temperatures.
It was recently reported that a continuous electric current is a powerful control parameter to trigger changes in the electronic structure and metal-insulator transitions (MITs) in Ca2RuO4. However, the spatial evolution of the MIT and the implications of the unavoidable Joule heating have not been clarified yet, often hindered by the difficulty to asses the local sample temperature. In this work, we perform infrared thermal imaging on single-crystal Ca2RuO4 while controlling the MIT by electric current. The change in emissivity at the phase transition allows us to monitor the gradual formation and expansion of metallic phase upon increasing current. Our local temperature measurements indicate that, within our experimental resolution, the MIT always occurs at the same local transition temperatures, irrespectively if driven by temperature or by current. Our results highlight the importance of local heating, phase coexistence, and microscale inhomogeneity when studying strongly correlated materials under the flow of electric current.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
