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Register a new userSupercurrent in a double quantum dot
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Added by
Juan Carlos Estrada Salda\\~na
Publication date
2018
fields
Physics
and research's language is
English
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We demonstrate the Josephson effect in a serial double quantum dot defined in a nanowire with epitaxial superconducting leads. The supercurrent stability diagram adopts a honeycomb pattern with electron-hole and left-right reflection symmetry. We observe sharp discontinuities in the magnitude of the critical current, $I_c$, as a function of dot occupation, related to doublet to singlet ground state transitions. Detuning of the energy levels offers a tuning knob for $I_c$, which attains a maximum at zero detuning. The consistency between experiment and theory indicates that our device is a faithful realization of the two-impurity Anderson model.
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Serial double quantum dots created in semiconductor nanostructures provide a versatile platform for investigating two-electron spin quantum states, which can be tuned by electrostatic gating and an external magnetic field. In this work, we directly measure the supercurrent reversal between adjacent charge states of an InAs nanowire double quantum dot with superconducting leads, in good agreement with theoretical models. In the even charge parity sector, we observe a supercurrent blockade with increasing magnetic field, corresponding to the spin singlet to triplet transition. Our results demonstrate a direct spin to supercurrent conversion, the superconducting equivalent of the Pauli spin blockade. This effect can be exploited in hybrid quantum architectures coupling the quantum states of spin systems and superconducting circuits.
A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $sim 27%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80%$ and $-90%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $pm 80%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments.
We analyze the transport properties of a double quantum dot device with both dots coupled to perfect conducting leads and to a finite chain of N non-interacting sites connecting both of them. The inter-dot chain strongly influences the transport across the system and the Local Density of States of the dots. We study the case of small number of sites, so that Kondo box effects are present, varying the coupling between the dots and the chain. For odd N and small coupling between the inter-dot chain and the dots, a state with two coexisting Kondo regimes develops: the bulk Kondo due to the quantum dots connected to leads and the one produced by the screening of the quantum dots spins by the spin in the finite chain at the Fermi level. As the coupling to the inter-dot chain increases, there is a crossover to a molecular Kondo effect, due to the screening of the molecule (formed by the finite chain and the quantum dots) spin by the leads. For even N the two-Kondo temperatures regime does not develop and the physics is dominated by the usual competition between Kondo and antiferromagnetism between the quantum dots. We finally study how the transport properties are affected as N is increased. For the study we used exact multi-configurational Lanczos calculations and finite U slave-boson mean-field theory at T = 0. The results obtained with both methods describe qualitatively and also quantitatively the same physics.
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential hindrance for quantum computing architectures that can be charge-sensitive during certain operations. Here we examine phonon generation in a GaAs double dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analog of the Raman effect, stimulated phonon emission is shown to produce population inversion of a two-level system and provides spectroscopic signatures of the phononic environment created by the nanoscale device geometry.
We calculate the nonequilibrium conductance of a system of two capacitively coupled quantum dots, each one connected to its own pair of conducting leads. The system has been used recently to perform pseudospin spectroscopy by controlling independently the voltages of the four leads. The pseudospin is defined by the orbital occupation of one or the other dot. Starting from the SU(4) symmetric point of spin and pseudospin degeneracy in the Kondo regime, for an odd number of electrons in the system, we show how the conductance through each dot varies as the symmetry is reduced to SU(2) by a pseudo-Zeeman splitting, and as bias voltages are applied to any of the dots. We analize the expected behavior of the system in general, and predict characteristic fingerprint features of the SU(4) to SU(2) crossover that have not been observed so far.
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