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Register a new userLow-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices
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We present a sensitive, tunable radio-frequency resonator designed to detect reactive changes in nanoelectronic devices down to dilution refrigerator temperatures. The resonator incorporates GaAs varicap diodes to allow electrical tuning of the resonant frequency and the coupling to the input line. We find a resonant frequency tuning range of 8.4 MHz at 55 mK that increases to 29 MHz at 1.5 K. To assess the impact on performance of different tuning conditions, we connect a quantum dot in a silicon nanowire field-effect transistor to the resonator, and measure changes in the device capacitance caused by cyclic electron tunneling. At 250 mK, we obtain an equivalent charge sensitivity of $43~mu e / sqrt{text{Hz}}$ when the resonator and the line are impedance-matched and show that this sensitivity can be further improved to $31~mu e / sqrt{text{Hz}}$ by re-tuning the resonator. We understand this improvement by using an equivalent circuit model and demonstrate that for maximum sensitivity to capacitance changes, in addition to impedance matching, a high-quality resonator with low parasitic capacitance is desired.
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Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing new physical effects and improving the performance of quantum technologies, sensors and metrological standards. The challenge is a longstanding one, with the lowest reported on-chip electron temperature having remained around 4 mK for more than 15 years. This is despite the fact that microkelvin temperatures have been accessible in bulk materials since the mid 20th century. In this review we describe progress made in the last five years using new cooling techniques. Developments have been driven by improvements in the understanding of nanoscale physics, material properties and heat flow in electronic devices at ultralow temperatures, and have involved collaboration between universities and institutes, physicists and engineers. We hope that this review will serve as a summary of the current state-of-the-art, and provide a roadmap for future developments. We focus on techniques that have shown, in experiment, the potential to reach sub-millikelvin electron temperatures. In particular, we focus on on-chip demagnetisation refrigeration. Multiple groups have used this technique to reach temperatures around 1 mK, with a current lowest temperature below 0.5 mK.
We demonstrate high-contrast state detection of a superconducting flux qubit. Detection is realized by probing the microwave transmission of a nonlinear resonator, based on a SQUID. Depending on the driving strength of the resonator, the detector can be operated in the monostable or the bistable mode. The bistable operation combines high-sensitivity with intrinsic latching. The measured contrast of Rabi oscillations is as high as 87 %; of the missing 13 %, only 3 % is unaccounted for. Experiments involving two consecutive detection pulses are consistent with preparation of the qubit state by the first measurement.
We present a simple micromanipulation technique to transfer suspended graphene flakes onto any substrate and to assemble them with small localized gates into mechanical resonators. The mechanical motion of the graphene is detected using an electrical, radio-frequency (RF) reflection readout scheme where the time-varying graphene capacitor reflects a RF carrier at f=5-6 GHz producing modulation sidebands at f +/- fm. A mechanical resonance frequency up to fm=178 MHz is demonstrated. We find both hardening/softening Duffing effects on different samples, and obtain a critical amplitude of ~40 pm for the onset of nonlinearity in graphene mechanical resonators. Measurements of the quality factor of the mechanical resonance as a function of DC bias voltage Vdc indicate that dissipation due to motion-induced displacement currents in graphene electrode is important at high frequencies and large Vdc.
Spectral properties of a quantum circuit are efficiently read out by monitoring the resonance frequency shift it induces in a microwave resonator coupled to it. When the two systems are strongly detuned, theory attributes the shift to an effective resonator capacitance or inductance that depends on the quantum circuit state. At small detuning, the shift arises from the exchange of virtual photons, as described by the Jaynes-Cummings model. Here we present a theory bridging these two limits and illustrate, with several examples, its necessity for a general description of quantum circuits readout.
We demonstrate dispersive readout of the spin of an ensemble of Nitrogen-Vacancy centers in a high-quality dielectric microwave resonator at room temperature. The spin state is inferred from the reflection phase of a microwave signal probing the resonator. Time-dependent tracking of the spin state is demonstrated, and is employed to measure the T1 relaxation time of the spin ensemble. Dispersive readout provides a microwave interface to solid state spins, translating a spin signal into a microwave phase shift. We estimate that its sensitivity can outperform optical readout schemes, owing to the high accuracy achievable in a measurement of phase. The scheme is moreover applicable to optically inactive spin defects and it is non-destructive, which renders it insensitive to several systematic errors of optical readout and enables the use of quantum feedback.
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