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Register a new userDoping-induced magnetism in the semiconducting B20 compound RuGe
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RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagnetic semimetal, are both isostructural to the Kondo insulator FeSi and the skyrmion lattice host MnSi. Here, we have explored the magnetic and transport properties of Co-doped RuGe: Ru$_{1-x}$Co$_x$Ge. For small values of $x$, a magnetic ground state emerges with $T_{c}approx$ 5 $-$ 9 K, which is accompanied by a moderate decrease in electrical resistivity and a Seebeck coefficient that indicates electron-like charge carriers. The magnetization, magnetoresistance, and the specific heat capacity all resemble that of Fe$_{1-x}$Co$_x$Si for similar Co substitution levels, suggesting that Ru$_{1-x}$Co$_x$Ge hosts equally as interesting magnetic and charge carrier transport properties.
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Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 K and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin-rotation (muSR), scanning tunneling microscopy (STM), as well as density functional theory (DFT) calculations. The muon spin rotation measurements show the presence of a large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites which are randomly distributed in the lattice at the sub-percent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9-2.8 mu_B. Further, we find that the magnetic order stabilized in 2H-MoTe2 and 2H-MoSe2 is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2 and 2H-MoSe2 as a new class of magnetic semiconductors and opens a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.
Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit ($s^2 p^6 d^{10}$). Angle-resolved photoemission spectroscopy (ARPES) reveals a mass renormalization of $m^{*}/m_{bare}= 1.4$, where $m^{*}$ is the measured effective mass and $m_{bare}$ is the mass from density functional theory (DFT) calculations with no added on-site Coulomb repulsion. Our measurements are in quantitative agreement with dynamical mean field theory (DMFT) calculations, highlighting the many-body origin of the mass renormalization. This mass renormalization lies in dramatic contrast to other filled shell intermetallics, including the thermoelectric materials CoTiSb and NiTiSn; and has a similar origin to that in FeSi, where Hunds coupling induced fluctuations across the gap can explain a dynamical self-energy and correlations. Our work calls for a re-thinking of the role of correlations and Hunds coupling in intermetallic band insulators.
Single crystals of the single Kagome layer compound FeSn are investigated using x-ray and neutron scattering, magnetic susceptibility and magnetization, heat capacity, resistivity, Hall, Seebeck, thermal expansion, thermal conductivity measurements and density functional theory (DFT). FeSn is a planar antiferromagnet below TN = 365 K and exhibits ferromagnetic magnetic order within each Kagome layer. The in-plane magnetic susceptibility is sensitive to synthesis conditions. Resistivity, Hall and Seebeck results indicate multiple bands near the Fermi energy. The resistivity of FeSn is about 3 times lower for current along the stacking direction than in the plane, suggesting that transport and the bulk electronic structure of FeSn is not quasi 2D. FeSn is an excellent metal with Rho(300K)/Rho(2K) values about 100 in both directions. While the ordered state is antiferromagnetic, high temperature susceptibility measurements indicate a ferromagnetic Curie-Weiss temperature of 173 K, reflecting the strong in-plane ferromagnetic interactions. DFT calculations show a 3D electronic structure with the Dirac nodal lines along the K-H directions in the magnetic Brillouin zone about 0.3 eV below the Fermi energy, with the Dirac dispersions at the K points gapped by spin-orbit coupling except at the H point. The magnetism, however, is highly 2D with Jin-plane/Jout-of-plane = 10. The predicted spin-wave spectrum is presented.
This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.
We systematically investigate the magnetic properties and local structure of Ba2YIrO6 to demonstrate that Y and Ir lattice defects in the form of antiphase boundary or clusters of antisite disorder affect the magnetism observed in this $d^4$ compound. We compare the magnetic properties and atomic imaging of (1) a slow cooled crystal, (2) a crystal quenched from 900degree C after growth, and (3) a crystal grown using a faster cooling rate than the slow cooled one. Atomic imaging by scanning transmission electron microscopy (STEM) shows that quenching from 900oC introduces antiphase boundary to the crystals, and a faster cooling rate during crystal growth leads to clusters of Y and Ir antisite disorder. STEM study suggests the antiphase boundary region is Ir-rich with a composition of Ba2YIrO6. The magnetic measurements show that Ba2YIrO6 crystals with clusters of antisite defects have a larger effective moment and a larger saturation moment than the slow-cooled crystals. Quenched crystals with Ir-rich antiphase boundary shows a slightly suppressed saturation moment than the slow cooled crystals, and this seems to suggest that antiphase boundary is detrimental to the moment formation. Our DFT calculations suggest magnetic condensation is unlikely as the energy to be gained from superexchange is small compared to the spin-orbit gap. However, once Y is replaced by Ir in the antisite disordered region, the picture of local non-magnetic singlets breaks down and magnetism can be induced. This is because of (a) enhanced interactions due to increased overlap of orbitals between sites, and, (b) increased number of orbitals mediating the interactions. Our work highlights the importance of lattice defects in understanding the experimentally observed magnetism in Ba2YIrO6 and other J=0 systems.
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