No Arabic abstract
Many years and great effort have been spent constructing the microscopic model for the room temperature multiferroic BiFeO3 However, earlier models implicitly assumed that the cycloidal wavevector q was confined to one of the three-fold symmetric axis in the hexagonal plane normal to the electric polarization. Because recent measurements indicate that q can be rotated by a magnetic field, it is essential to properly treat the anisotropy that confines q at low fields. We show that the anisotropy energy $-K_3 S^6 sin^6 theta cos 6 phi $ confines the wavevectors q to the three-fold axis $phi =0$ and $+-2 pi/3$ within the hexagonal plane with $theta = pi /2$.
The present manuscript completes the study presented in two recent research articles [K. Koumpouras and I. Galanakis, textit{J. Magn. Magn. Mater.} 323, 2328 (2011); textit{ibid}, textit{J. Spintron. Magn. Nanomater.} 1, in press]. Preliminary first-principles calculations using the QUANTUM-espresso package [P. Giannozzi et al textit{J. Phys.:Condens. Matter} 21, 395502 (2009)] on the magnetic behavior of ultra-thin epitaxial multilayers between the BiFeO$_3$ magnetoelectric compound and various types of spacers are presented. As spacer we have considered i) InP semiconductor, ii) Fe which is a ferromagnet, and iii) metallic V. In all cases under study the growth axis of the multilayer was the [001]. Our results indicate that the magnetic properties are seriously downgraded for the ultrathin BiFeO$_3$ multilayers independent of the nature of the spacer and in some cases under study magnetism even vanishes. More extensive calculations are needed to establish a more clear view of the physical properties of the interfaces involving the BiFeO$_3$ compound.
Multiferroic BiFeO3 undergoes a transition from a distorted spiral phase to a G-type antiferromagnet above a critical field H_c that depends on the orientation m of the field. We show that H_c(m) has a maximum when oriented along a cubic diagonal parallel to the electric polarization P and a minimum in the equatorial plane normal to P when two magnetic domains with the highest critical fields are degenerate. The measured critical field along a cubic axis is about 19 T but H_c is predicted to vary by as much as 2.5 T above and below this value. The orientational dependence of H_c(m) is more complex than indicated by earlier work, which did not consider the competition between magnetic domains.
Multiferroics permit the magnetic control of the electric polarization and electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO$_3$ over the gigahertz--terahertz frequency range. Supporting theory attributes the observed unidirectional transmission to the spin-current driven dynamic ME effect. These findings are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.
We demonstrate the robustness of polarization in ultrathin compressive strained BiFeO$_3$ single layers and heterostructures during epitaxial thin-film growth. Using in-situ optical second harmonic generation (ISHG), we explore the emergence of ferroelectric phases at the strain-driven morphotropic phase boundary in the ultrathin regime. We find that the epitaxial films grow in the ferroelectric tetragonal (T-) phase without exhibition of a critical thickness. The robustness of this high-temperature T-phase against depolarizing-field effects is further demonstrated during the growth of capacitor-like (metal|ferroelectric|metal) heterostructures. Using temperature-dependent ISHG post-deposition, we identify the thickness-dependent onset of the monoclinic distortion in the T-matrix and trace the signature of the subsequent emergence of the strain-relaxed rhombohedral-like monoclinic phase. Our results show that strain-driven T-phase stabilization in BiFeO$_3$ yields a prominent candidate material for realizing ultrathin ferroelectric devices.
The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental results. The lower limit of the magnetic order response time of CoFe in the BiFeO3/CoFe heterojunction is theoretically quantified to be on to the order of 100 ps. Our results indicate that the switching behavior of CoFe in the BiFeO3/CoFe heterojunction is dominated by the rotation of the Neel vector in BiFeO3 rather than the unidirectional exchange bias at the interface. We also quantify the magnitude of the interface exchange coupling coefficient J_int to be 0.32 pJ/m by comparing our simulation results with the giant magnetoresistance (GMR) curves and the magnetic hysteresis loop in the experiments. To the best of our knowledge, this is the first time that J_int is extracted quantitatively from experiments. Furthermore, we demonstrate that the switching success rate and the thermal stability of the BiFeO3/CoFe heterojunction can be improved by reducing the thickness of CoFe and increasing the length to width aspect ratio of the BiFeO3/CoFe heterojunction. Our theoretical model provides a comprehensive framework to study the magnetoelectric properties and the manipulation of the magnetic order of CoFe in the BiFeO3/CoFe heterojunction.