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Register a new userMagnetic-optical transitions induced by twisted light in quantum dots
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Added by
Guillermo Federico Quinteiro
Publication date
2017
fields
Physics
and research's language is
English
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It has been theoretically predicted that light carrying orbital angular momentum, or twisted light, can be tuned to have a strong magnetic-field component at optical frequencies. We here consider the interaction of these peculiar fields with a semiconductor quantum dot and show that the magnetic interaction results in new types of optical transitions. In particular, a single pulse of such twisted light can drive light-hole-to-conduction band transitions that are cumbersome to produce using conventional Gaussian beams or even twisted light with dominant electric fields.
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We theoretically investigate the effect of inhomogeneous light beams with (twisted light) and without (plane-wave light) orbital angular momentum on semiconductor-based nanostructures, when the symmetry axes of the beam and the nanostructure are displaced parallel to each other. Exact analytical results are obtained by expanding the off-centered light field in terms of the appropriate light modes centered around the nanostructure. We demonstrate how electronic transitions involving the transfer of different amounts of orbital angular momentum are switched on and off as a function of the separation between the axes of the beam and the system. In particular, we show that even off-centered plane-wave beams induce transitions such that the angular momenta of the initial and final states are different.
We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of gratings thanks to the fact that collimated laser beams present a component of the lights electric field in the propagation direction. We derive the matrix elements of the light-matter interaction for a Bessel-type twisted-light beam represented by its vector potential in the paraxial approximation. Then, we consider the dynamics of photo-excited electrons making intersubband transitions between the first and second subbands of a standard semiconductor quantum well. Finally, we analyze the light-matter matrix elements in order to evaluate which transitions are more favorable for given orbital angular momentum of the light beam in the case of small semiconductor structures.
An optical-vortex is an inhomogeneous light beam having a phase singularity at its axis, where the intensity of the electric and/or magnetic field may vanish. Already well studied are the paraxial beams, which are known to carry well defined values of spin (polarization $sigma$) and orbital angular momenta; the orbital angular momentum per photon is given by the topological charge $ell$ times the Planck constant. Here we study the light-hole--to--conduction band transitions in a semiconductor quantum dot induced by a highly-focused beam originating from a $ell=1$ paraxial optical vortex. We find that at normal incidence the pulse will produce two distinct types of electron--hole pairs, depending on the relative signs of $sigma$ and $ell$. When sign($sigma$)$=$sign($ell$), the pulse will create electron--hole pairs with band+spin and envelope angular momenta both equal to one. In contrast, for sign($sigma$)$ eq$sign($ell$), the electron-hole pairs will have neither band+spin nor envelope angular momenta. A tightly-focused optical-vortex beam thus makes possible the creation of pairs that cannot be produced with plane waves at normal incidence. With the addition of co-propagating plane waves or switching techniques to change the charge $ell$ both the band+spin and the envelope angular momenta of the pair wave-function can be precisely controlled. We discuss possible applications in the field of spintronics that open up.
This review article describes theoretical and experimental advances in using quantum dots as a system for studying impurity quantum phase transitions and the non-Fermi liquid behavior at the quantum critical point.
Elastic light scattering by low-dimensional semiconductor objects is investigated theoretically. The differential cross section of resonant light scattering on excitons in quantum dots is calculated. The polarization and angular distribution of scattered light do not depend on the quantum-dot form, sizes and potential configuration if light wave lengths exceed considerably the quantum-dot size. In this case the magnitude of the total light scattering cross section does not depend on quantum-dot sizes. The resonant total light scattering cross section is about a square of light wave length if the exciton radiative broadening exceeds the nonradiative broadening. Radiative broadenings are calculated.
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