Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userEnergy-dependent resonance broadening in symmetric and asymmetric molecular junctions from an ab initio non-equilibrium Greens function approach
181
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The electronic structure of organic-inorganic interfaces often feature resonances originating from discrete molecular orbitals coupled to continuum lead states. An example are molecular junctions, individual molecules bridging electrodes, where the shape and peak energy of such resonances dictate junction conductance, thermopower, I-V characteristics and related transport properties. In molecular junctions where off-resonance coherent tunneling dominates transport, resonance peaks in the transmission function are often assumed to be Lorentzian functions with an energy-independent broadening parameter $Gamma$. Here we define a new energy-dependent resonance broadening function, $Gamma(E)$, based on diagonalization of non-Hermitian matrices, which can describe resonances of a more complex, non-Lorentzian nature and can be decomposed into components associated with the left and right lead, respectively. We compute this quantity via an emph{ab initio} non-equilibrium Greens function approach based on density functional theory for both symmetric and asymmetric molecular junctions, and show that our definition of $Gamma(E)$, when combined with Breit-Wigner formula, reproduces the transmission calculated from DFT-NEGF. Through a series of examples, we illustrate how this approach can shed new light on experiments and understanding of junction transport properties in terms of molecular orbitals.
rate research
Read More
We present a novel ab initio non-equilibrium approach to calculate the current across a molecular junction. The method rests on a wave function based full ab initio description of the central region of the junction combined with a tight binding approximation for the electrodes in the frame of the Keldysh Greens function formalism. Our procedure is demonstrated for a dithiolethine molecule between silver electrodes. The main conducting channel is identified and the full current-voltage characteristic is calculated.
We present a novel ab initio non-equilibrium approach to calculate the current across a molecular junction. The method rests on a wave function based description of the central region of the junction combined with a tight binding approximation for the electrodes in the frame of the Keldysh Greens function formalism. In addition we present an extension so as to include effects of the two-particle propagator. Our procedure is demonstrated for a dithiolbenzene molecule between silver electrodes. The full current-voltage characteristic is calculated. Specific conclusions for the contribution of correlation and two-particle effects are derived. The latter are found to contribute about 5% to the current. The order of magnitude of the current coincides with experiments.
We extend the ab initio molecular dynamics (AIMD) method based on density functional theory to the nonequilibrium situation where an electronic current is present in the electronic system. The dynamics is treated using the semi-classical generalized Langevin equation. We demonstrate how the full anharmonic description of the inter-atomic forces is important in order to understand the current-induced heating and the energy distribution both in frequency and in real space.
In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (TFETs) based on direct bandgap semiconductors. The model provides closed-form expressions for I-V based on: 1) a modified version of the well-known Fowler-Nordheim (FN) formula (in the ON-state), and 2) an equation which describes the OFF-state performance while providing continuity at the ON/OFF threshold by means of a term introduced as the continuity factor. It is shown that traditional approaches such as FN are accurate in TFETs only through correct evaluation of the total band bending distance and the tunneling effective mass. General expressions for these two key parameters are provided. Moreover, it is demonstrated that the tunneling effective mass captures both the ellipticity of evanescent states and the dual (electron/hole) behavior of the tunneling carriers, and it is further shown that such a concept is even applicable to semiconductors with nontrivial energy dispersion. Ultimately, it is found that the I-V characteristics obtained by using this model are in close agreement with state-of-the-art quantum transport simulations both in the ON- and OFF-state, thus providing validation of the analytic approach.
We perform on-the-fly non-adiabatic molecular dynamics simulations using the symmetrical quasi-classical (SQC) approach with the recently suggested molecular Tully models: ethylene and fulvene. We attempt to provide benchmarks of the SQC methods using both the square and the triangle windowing schemes as well as the recently proposed electronic zero-point-energy correction scheme (so-called the gamma correction). We use the quasi-diabatic propagation scheme to directly interface the diabatic SQC methods with adiabatic electronic structure calculations. Our results showcase the drastic improvement of the accuracy by using the trajectory-adjusted gamma-corrections, which outperform the widely used trajectory surface hopping method with decoherence corrections. These calculations provide useful and non-trivial tests to systematically investigate the numerical performance of various diabatic quantum dynamics approaches, going beyond simple diabatic model systems that have been used as the major workhorse in the quantum dynamics field. At the same time, these available benchmark studies will also likely foster the development of new quantum dynamics approaches based on these techniques.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
