Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userGrowth and texture of Spark Plasma Sintered Al2O3 ceramics: a combined analysis of X-rays and Electron Back Scatter Diffraction
171
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Textured alumina ceramics were obtained by Spark Plasma Sintering (SPS) of undoped commercial a-Al2O3 powders. Various parameters (density, grain growth, grain size distribution) of the alumina ceramics, sintered at two typical temperatures 1400{deg}C and 1700{deg}C, are investigated. Quantitative textural and structural analysis, carried out using a combination of Electron Back Scattering Diffraction (EBSD) and X-ray diffraction (XRD), are represented in the form of mapping, and pole figures. The mechanical properties of these textured alumina ceramics include high elastic modulus and hardness value with high anisotropic nature, opening the door for a large range of applications
rate research
Read More
Multiferroic BiFeO3 (BFO) / La0.7Sr0.3MnO3 heterostructured thin films were grown by pulsed laser deposition on polished spark plasma sintered LaAlO3 (LAO) polycrystalline substrates. Both polycrystalline LAO substrates and BFO films were locally characterized using electron backscattering diffraction (EBSD), which confirmed the high-quality local epitaxial growth on each substrate grain. Piezoforce microscopy was used to image and switch the piezo-domains, and the results are consistent with the relative orientation of the ferroelectric variants with the surface normal. This high-throughput synthesis process opens the routes towards wide survey of electronic properties as a function of crystalline orientation in complex oxide thin film synthesis.
We present the synthesis of D0$_{22}$ Mn$_{3 - delta}$Ga ($delta$ = 0, 1) Heusler alloys by Spark Plasma Sintering method. The single phase Mn$_3$Ga (T$_mathrm{c}$ $simeq$ 780 K) is synthesized, while Mn$_2$Ga (T$_mathrm{c}$ $simeq$ 710 K) is found to coexist with a near-stoichiometric room temperature paramagnetic Mn$_9$Ga$_5$~($approx$ 15 %) phase due to its lower formation energy, as confirmed from our density functional theory (DFT) calculations. The alloys show hard magnetic behavior with large room temperature spontaneous magnetization m$_s$(80 kOe) = 1.63 (0.83) $mu_mathrm{B}$/f.u. and coercivity H$_mathrm{c}$ = 4.28 (3.35) kOe for Mn$_3$Ga (Mn$_2$Ga). The magnetic properties are further investigated till T$_mathrm{c}$ and the H$_mathrm{c}$ (T) analysis by Stoner-Wohlfarth model shows the nucleation mechanism for the magnetization reversal. The experimental results are well supported by DFT calculations, which reveal that the ground state of D0$_{22}$ Mn$_2$Ga is achieved by the removal of Mn-atoms from full Heusler Mn$_3$Ga structure in accordance with half Heusler alloy picture.
Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of {gamma}-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system experiences a Lifshitz transition at a critical carrier density of 3E13 cm-2, where a remarkably strong enhancement of Rashba spin-orbit interaction and an emergence of Kondo effect at low temperatures are observed. Moreover, as the carrier concentration depletes with decreasing gating voltage, the electron mobility is enhanced by more than 6 times in magnitude, leading to the observation of clear quantum oscillations. The great tunability of GAO/STO interface by EDLT gating not only shows promise for design of oxide devices with on-demand properties, but also sheds new light on the electronic structure of 2DEG at the non-isostructural spinel/perovskite interface.
By means of temperature and wavelength-dependent small-angle neutron scattering (SANS) experiments on sintered isotropic and textured Nd-Fe-B magnets we provide evidence for the existence of an anisometric structure in the microstructure of the textured magnets. This conclusion is reached by observing a characteristic cross-shaped angular anisotropy in the total unpolarized SANS cross section at temperatures well above the Curie temperature. Comparison of the experimental SANS data to a microstructural model based on the superquadrics form factor allows us to estimate the shape and lower bounds for the size of the structure. Subtraction of the scattering cross section in the paramagnetic regime from data taken at room temperature provides the magnetic SANS cross section. Surprisingly, the anisotropy of the magnetic scattering is very similar to the nuclear SANS signal, suggesting that the nuclear structure is decorated by the magnetic moments via spin-orbit coupling. Based on the computation of the two-dimensional correlation function we estimate lower bounds for the longitudinal and transversal magnetic correlation lengths.
We show that by introducing isoelectronic iron (Fe) magnetic impurities and Beryllium (Be) double-donor atoms into InAs, it is possible to grow a n-type ferromagnetic semiconductor (FMS) with the ability to control ferromagnetism by both Fe and independent carrier doping by low-temperature molecular-beam epitaxy. We demonstrate that (In,Fe)As doped with electrons behaves as an n-type electron-induced FMS. This achievement opens the way to realize novel spin-devices such as spin light-emitting diodes or spin field-effect transistors, as well as helps understand the mechanism of carrier-mediated ferromagnetism in FMSs.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
