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Register a new userTopological Signatures in the Electronic Structure of Graphene Spirals
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Added by
Stanislav Avdoshenko
Publication date
2013
fields
Physics
and research's language is
English
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Topology is familiar mostly from mathematics, but also natural sciences have found its concepts useful. Those concepts have been used to explain several natural phenomena in biology and physics, and they are particularly relevant for the electronic structure description of topological insulators and graphene systems. Here, we introduce topologically distinct graphene forms - graphene spirals - and employ density-functional theory to investigate their geometric and electronic properties. We found that the spiral topology gives rise to an intrinsic Rashba spin-orbit splitting. Through a Hamiltonian constrained by space curvature, graphene spirals have topologically protected states due to time-reversal symmetry. In addition, we argue that the synthesis of such graphene spirals is feasible and can be achieved through advanced bottom-up experimental routes that we indicate in this work.
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Wrinkling is a ubiquitous phenomenon in two-dimensional membranes. In particular, in the large-scale growth of graphene on metallic substrates, high densities of wrinkles are commonly observed. Despite their prevalence and potential impact on large-scale graphene electronics, relatively little is known about their structural morphology and electronic properties. Surveying the graphene landscape using atomic force microscopy, we found that wrinkles reach a certain maximum height before folding over. Calculations of the energetics explain the morphological transition, and indicate that the tall ripples are collapsed into narrow standing wrinkles by van der Waals forces, analogous to large-diameter nanotubes. Quantum transport calculations show that conductance through these collapsed wrinkle structures is limited mainly by a density-of-states bottleneck and by interlayer tunneling across the collapsed bilayer region. Also through systematic measurements across large numbers of devices with wide folded wrinkles, we find a distinct anisotropy in their electrical resistivity, consistent with our transport simulations. These results highlight the coupling between morphology and electronic properties, which has important practical implications for large-scale high-speed graphene electronics.
Multilayer graphene with rhombohedral and Bernal stacking are supposed to be metallic, as predicted by density functional theory calculations using semi-local functionals. However recent angular resolved photoemission and transport data have questioned this point of view. In particular, rhombohedral flakes are suggested to be magnetic insulators. Bernal flakes composed of an even number of layers are insulating, while those composed of an odd number of layers are pseudogapped. Here, by systematically benchmarking with plane waves codes, we develop very accurate all-electron Gaussian basis sets for graphene multilayers. We find that, in agreement with our previous calculations, rhombohedral stacked multilayer graphene are gapped for and magnetic. However, the valence band curvature and the details of the electronic structure depend crucially on the basis set. Only substantially extended basis sets are able to correctly reproduce the effective mass of the valence band top at the K point, while the popular POB-TZVP basis set leads to a severe overestimation. In the case of Bernal stacking, we show that exact exchange gaps the flakes composed by four layers and opens pseudogaps for N = 3, 6, 7, 8. However, the gap or pseudogap size and its behaviour as a function of thickness are not compatible with experimental data. Moreover, hybrid functionals lead to a metallic solution for 5 layers and a magnetic ground state for 5, 6 and 8 layers. Magnetism is very weak with practically no effect on the electronic structure and the magnetic moments are mostly concentrated in the central layers. Our hybrid functional calculations on trilayer Bernal graphene multilayers are in excellent agreement with non-magnetic GW calculations. For thicker multilayers, our calculations are a benchmark for manybody theoretical modeling of the low energy electronic structure.
We have used scanning tunneling microscopy and spectroscopy to resolve the spatial variation of the density of states of twisted graphene layers on top of a highly oriented pyrolytic graphite substrate. Owing to the twist a moire pattern develops with a periodicity that is substantially larger than the periodicity of a single layer graphene. The twisted graphene layer has electronic properties that are distinctly different from that of a single layer graphene due to the nonzero interlayer coupling. For small twist angles (about 1-3.5 degree) the integrated differential conductivity spectrum exhibits two well-defined Van Hove singularities. Spatial maps of the differential conductivity that are recorded at energies near the Fermi level exhibit a honeycomb structure that is comprised of two inequivalent hexagonal sub-lattices. For energies |E-E_F|>0.3 eV the hexagonal structure in the differential conductivity maps vanishes. We have performed tight-binding calculations of the twisted graphene system using the propagation method, in which a third graphene layer is added to mimic the substrate. This third layer lowers the symmetry and explains the development of the two hexagonal sub-lattices in the moire pattern. Our experimental results are in excellent agreement with the tight-binding calculations.
We explore a network of electronic quantum valley Hall (QVH) states in the moire crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-Perot and Aharanov-Bohm oscillations which are robust in magnetic fields ranging from 0 to 8T, in strong contrast to more conventional 2D systems where trajectories in the bulk are bent by the Lorentz force. This persistence in magnetic field and the linear spacing in density indicate that charge carriers in the bulk flow in topologically protected, one dimensional channels. With this work we demonstrate coherent electronic transport in a lattice of topologically protected states.
The function of nano-scale devices critically depends on the choice of materials. For electron transport junctions it is natural to characterize the materials by their conductance length dependence, $beta$. Theoretical estimations of $beta$ are made employing two primary theories: complex band structure and DFT-NEGF Landauer transport. Both reveal information on $beta$ of individual states; i.e. complex Bloch waves and transmission eigenchannels, respectively. However, it is unclear how the $beta$-values of the two approaches compare. Here, we present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT-NEGF transport calculations for two molecular and one semi-conductor junctions. Despite the different nature of the two methods, we find strong agreement of the calculated decay constants for the molecular junctions while the semi-conductor junction shows some discrepancies. The results presented here provide a template for studying the intrinsic, channel resolved length dependence of the junction through complex band structure of the central material in the heterogeneous nano-scale junction.
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