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Register a new userHybrid-functional electronic structure of multilayer graphene
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Added by
Marco Campetella Dr.
Publication date
2020
fields
Physics
and research's language is
English
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Multilayer graphene with rhombohedral and Bernal stacking are supposed to be metallic, as predicted by density functional theory calculations using semi-local functionals. However recent angular resolved photoemission and transport data have questioned this point of view. In particular, rhombohedral flakes are suggested to be magnetic insulators. Bernal flakes composed of an even number of layers are insulating, while those composed of an odd number of layers are pseudogapped. Here, by systematically benchmarking with plane waves codes, we develop very accurate all-electron Gaussian basis sets for graphene multilayers. We find that, in agreement with our previous calculations, rhombohedral stacked multilayer graphene are gapped for and magnetic. However, the valence band curvature and the details of the electronic structure depend crucially on the basis set. Only substantially extended basis sets are able to correctly reproduce the effective mass of the valence band top at the K point, while the popular POB-TZVP basis set leads to a severe overestimation. In the case of Bernal stacking, we show that exact exchange gaps the flakes composed by four layers and opens pseudogaps for N = 3, 6, 7, 8. However, the gap or pseudogap size and its behaviour as a function of thickness are not compatible with experimental data. Moreover, hybrid functionals lead to a metallic solution for 5 layers and a magnetic ground state for 5, 6 and 8 layers. Magnetism is very weak with practically no effect on the electronic structure and the magnetic moments are mostly concentrated in the central layers. Our hybrid functional calculations on trilayer Bernal graphene multilayers are in excellent agreement with non-magnetic GW calculations. For thicker multilayers, our calculations are a benchmark for manybody theoretical modeling of the low energy electronic structure.
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Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers.
We apply the semi-classical quantum Boltzmann formalism for the computation of transport properties to multilayer graphene. We compute the electrical conductivity as well as the thermal conductivity and thermopower for Bernal-stacked multilayers with an even number of layers. We show that the window for hydrodynamic transport in multilayer graphene is similar to the case of bilayer graphene. We introduce a simple hydrodynamic model which we dub the multi-fluid model and which can be used to reproduce the results for the electrical conductivity and thermopower from the quantum Boltzmann equation.
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