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Register a new userHomopolar bond formation in ZnV$_2$O$_4$ close to a metal-insulator transition
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Electronic structure calculations for spinel vanadate ZnV$_2$O$_4$ show that partial electronic delocalization in this system leads to structural instabilities. These are a consequence of the proximity to the itinerant-electron boundary, not being related to orbital ordering. We discuss how this mechanism naturally couples charge and lattice degrees of freedom in magnetic insulators close to such a crossover. For the case of ZnV$_2$O$_4$, this leads to the formation of V-V dimers along the [011] and [101] directions that readily accounts for the intriguing magnetic structure of ZnV$_2$O$_4$.
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A high-resolution investigation of the electron spectra close to the metal-to-insulator transition in dynamic mean-field theory is presented. An all-numerical, consistent confirmation of a smooth transition at zero temperature is provided. In particular, the separation of energy scales is verified. Unexpectedly, sharp peaks at the inner Hubbard band edges occur in the metallic regime. They are signatures of the important interaction between single-particle excitations and collective modes.
We have studied the effect of pressure on the pyrochlore iridate Eu$_2$Ir$_2$O$_7$, which at ambient pressure has a thermally driven insulator to metal transition at $T_{MI}sim120$,K. As a function of pressure the insulating gap closes, apparently continuously, near $P sim 6$,GPa. However, rather than $T_{MI}$ going to zero as expected, the insulating ground state crosses over to a metallic state with a negative temperature coefficient of resistivity, calling into question the true nature of both ground states. The high temperature state also crosses over near 6 GPa, from an incoherent to a conventional metal, suggesting a connection between the high and the low temperature states.
In the context of correlated insulators, where electron-electron interactions (U) drive the localization of charge carriers, the metal-insulator transition (MIT) is described as either bandwidth (BC) or filling (FC) controlled. Motivated by the challenge of the insulating phase in Sr$_2$IrO$_4$, a new class of correlated insulators has been proposed, in which spin-orbit coupling (SOC) is believed to renormalize the bandwidth of the half-filled $j_{mathrm{eff}} = 1/2$ doublet, allowing a modest U to induce a charge-localized phase. Although this framework has been tacitly assumed, a thorough characterization of the ground state has been elusive. Furthermore, direct evidence for the role of SOC in stabilizing the insulating state has not been established, since previous attempts at revealing the role of SOC have been hindered by concurrently occurring changes to the filling. We overcome this challenge by employing multiple substituents that introduce well defined changes to the signatures of SOC and carrier concentration in the electronic structure, as well as a new methodology that allows us to monitor SOC directly. Specifically, we study Sr$_2$Ir$_{1-x}$T$_x$O$_4$ (T = Ru, Rh) by angle-resolved photoemission spectroscopy (ARPES), combined with ab-initio and supercell tight-binding calculations. This allows us to distinguish relativistic and filling effects, thereby establishing conclusively the central role of SOC in stabilizing the insulating state of Sr$_2$IrO$_4$. Most importantly, we estimate the critical value for spin-orbit coupling in this system to be $lambda_c = 0.42 pm 0.01$ eV, and provide the first demonstration of a spin-orbit-controlled MIT.
Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping induced insulator to metal transition is still a subject under intensive investigation. Here we probe the nanoscale electronic structure of the Mott insulator Sr$_2$IrO$_{4-delta}$ with low-temperature scanning tunneling microscopy and find enhanced local density of states (LDOS) inside the Mott gap at the location of individual apical oxygen site defects. We visualize paths of enhanced conductance arising from the overlapping of defect states which induces finite LDOS at the Fermi level. By combining these findings with the typical spatial extension of isolated defects of about 2~nm, we show that the insulator to metal transition in Sr$_2$IrO$_{4-delta}$ is of percolative nature.
We present measurements of the optical spectra on single crystals of spinel-type compound cis. This material undergoes a sharp metal-insulator transition at 230 K. Upon entering the insulating state, the optical conductivity shows an abrupt spectral weight transfer and an optical excitation gap opens. In the metallic phase, Drude components in low frequencies and an interband transition peak at $sim 2 eV$ are observed. In the insulating phase, a new peak emerges around $0.5 eV$. This peak is attributed to the transition of electrons from the occupied Ir$^{3+}$ $t_{2g}$ state to upper Ir$^{4+}$ $t_{2g}$ subband resulting from the dimerization of Ir$^{4+}$ ions in association with the simultaneous formations of Ir$^{3+}$ and Ir$^{4+}$ octamers as recently revealed by the x-ray diffraction experiment. Our experiments indicate that the band structure is reconstructed in the insulating phase due to the sudden structural transition.
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