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Register a new userAn Efficient Method for Quantum Transport Calculations in Nanostructures using Full Band Structure
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Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band structure treatment, since it poses a huge computational challenge. We have proposed here an efficient method for calculating full three-dimensionally coupled quantum transport in nanowire transistors including full band structure. We have shown the power of the method by simulating hole transport in p-type Ge nanowire transistors. The hole band structure obtained from our nearest neighbor sp3s* tight binding Hamiltonian agrees well qualitatively with more complex and accurate calculations that take third nearest neighbors into account. The calculated I-V results show how shifting of the energy bands due to confinement can be accurately captured only in a full band full quantum simulation.
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An approximate method based on adiabatic time dependent density functional theory (TDDFT) is presented, that allows for the description of the electron dynamics in nanoscale junctions under arbitrary time dependent external potentials. In this scheme, the density matrix of the device region is propagated according to the Liouville-von Neumann equation. The semi-infinite leads give rise to dissipative terms in the equation of motion which are calculated from first principles in the wide band limit. In contrast to earlier {em ab-initio} implementations of this formalism, the Hamiltonian is here approximated by a density expansion in the spirit of the density functional based tight-binding (DFTB) method without introducing empirical parameters. Results are presented for two prototypical molecular devices and compared to calculations at the full TDDFT level. The issue of non-existence of a steady state under certain conditions is also briefly touched on.
In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with different stacking orders. At the Dirac point, ABA-stacked TLG remains metallic while the ABC counterpart becomes insulating. The latter exhibits a gap-like dI/dV characteristics at low temperature and thermally activated conduction at higher temperatures, indicating an intrinsic gap ~6 meV. In magnetic fields, in addition to an insulating state at filling factor { u}=0, ABC TLG exhibits quantum Hall plateaus at { u}=-30, pm 18, pm 9, each of which splits into 3 branches at higher fields. Such splittings are signatures of the Lifshitz transition induced by trigonal warping, found only in ABC TLG, and in semi-quantitative agreement with theory. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.
We develop a quantum noise approach to study quantum transport through nanostructures. The nanostructures, such as quantum dots, are regarded as artificial atoms, subject to quasi-equilibrium fermionic reservoirs of electrons in biased leads. Noise operators characterizing the quantum fluctuation in the reservoirs are related to the damping and fluctuation of the artificial atoms through the quantum Langevin equation. The average current and current noise are derived in terms of the reservoir noise correlations. In the white-noise limit, we show that the current and current noise can be exactly calculated by the quantum noise approach, even in the presence of interaction such as Coulomb blockade. As a typical application, the average current and current noise through a single quantum dot are studied.
The task of finding the smallest energy needed to bring a solid to its onset of mechanical instability arises in many problems in materials science, from the determination of the elasticity limit to the consistent assignment of free energies to mechanically unstable phases. However, unless the space of possible deformations is low-dimensional and a priori known, this problem is numerically difficult, as it involves minimizing a function under a constraint on its Hessian, which is computionally prohibitive to obtain in low symmetry systems, especially if electronic structure calculations are used. We propose a method that is inspired by the well-known dimer method for saddle point searches but that adds the necessary ingredients to solve for the lowest onset of mechanical instability. The method consists of two nested optimization problems. The inner one involves a dimer-like construction to find the direction of smallest curvature as well as the gradient of this curvature function. The outer optimization then minimizes energy using the result of the inner optimization problem to constrain the search to the hypersurface enclosing all points of zero minimum curvature. Example applications to both model systems and electronic structure calculations are given.
We introduce a simple but efficient method for grand-canonical twist averaging in quantum Monte Carlo calculations. By evaluating the thermodynamic grand potential instead of the ground state total energy, we greatly reduce the sampling errors caused by twist-dependent fluctuations in the particle number. We apply this method to the electron gas and to metallic lithium, aluminum, and solid atomic hydrogen. We show that, even when using a small number of twists, grand-canonical twist averaging of the grand potential produces better estimates of ground state energies than the widely used canonical twist-averaging approach.
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