Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userField Tuned Superconductor to Insulator Transitions in an Amorphous Film with an Imposed Multiply Connected Geometry
97
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We have observed multiple magnetic field driven superconductor to insulator transitions (SIT) in amorphous Bi films perforated with a nano-honeycomb (NHC) array of holes. The period of the magneto-resistance, H=H_M=h/2eS where S is the area of a unit cell of holes, indicates the field driven transitions are boson dominated. The field-dependent resistance follows R(T)=R_0(H)exp(T_0(H)/T) on both sides of the transition so that the evolution between these states is controlled by the vanishing of T_0 to0. We compare our results to the thickness driven transition in NHC films and the field driven transitions in unpatterned Bi films, other materials, and Josephson junction arrays. Our results suggest a structural source for similar behavior found in some materials and that despite the clear bosonic nature of the SITs, quasiparticle degrees of freedom likely also play an important part in the evolution of the SIT.
rate research
Read More
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the dirty boson model, we have found a critical exponents product of $ u_d z$ > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal value of the critical resistance found at the transition call for further investigations in order to thoroughly understand these transitions.
We report magnetotransport measurements of the critical field behavior of thin Al films deposited onto multiply connected substrates. The substrates were fabricated via a standard electrochemical process that produced a triangular array of 66 nm diameter holes having a lattice constant of 100 nm. The critical field transition of the Al films was measured near $T_c$ as a function of field orientation relative to the substrate normal. With the field oriented along the normal ($theta=0$), we observe reentrant superconductivity at a characteristic matching field $H_m=0.22,mathrm{T}$, corresponding to one flux quantum per hole. In tilted fields, the position $H^*$ of the reentrance feature increases as $sec(theta)$, but the resistivity traces are somewhat more complex than those of a continuous superconducting film. We show that when the tilt angle is tuned such that $H^*$ is of the order of the upper critical field $H_c$, the entire critical region is dominated by the enhanced dissipation associated with a sub-matching perpendicular component of the applied field. At higher tilt angles a local maximum in the critical field is observed when the perpendicular component of the field is equal to the matching field.
Typically the disorder that alters the interference of particle waves to produce Anderson localization is potential scattering from randomly placed impurities. Here we show that disorder in the form of random gauge fields that act directly on particle phases can also drive localization. We present evidence of a superfluid bose glass to insulator transition at a critical level of this gauge field disorder in a nano-patterned array of amorphous Bi islands. This transition shows signs of metallic transport near the critical point characterized by a resistance of order 0.5 h/4e^2 , indicative of a quantum phase transition. The critical disorder also depends on interisland coupling in agreement with recent Quantum Monte Carlo simulations. Finally, these experiments are uniquely connected to theory because they employ a method for controlling a disorder parameter that coincides directly with a term that appears in model Hamiltonians. This correspondence will enable further high fidelity comparisons between theoretical and experimental studies of disorder effects on quantum critical systems.
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 k{Omega}, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.
In a minimal 2-band model with attractive interactions between fermions, we calculate the gap to single and two-particle excitations, the band-dependent spectral functions, the superfluid density and compressibility using quantum Monte Carlo (QMC) methods. We find Fermi and Bose insulating phases with signatures of incipient pairing evident in the single-particle spectral functions, and a superconducting state with three different spectral functions: (i) both bands show BCS behavior in which the minimum gap locus occurs on a closed contour on the underlying Fermi surface; (ii) both bands show BEC behavior in which the minimum gap occurs at a point; and (iii) band selective spectral characteristics, in which one band shows BCS while the other shows BEC behavior. At large interactions, we find a Mott phase of rung bosons in which the filling is one boson for every two sites, half the typical density constraint for Mott insulators.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
