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Register a new userField Tuned Superconductor to Insulator Transitions in an Amorphous Film with an Imposed Multiply Connected Geometry
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We have observed multiple magnetic field driven superconductor to insulator transitions (SIT) in amorphous Bi films perforated with a nano-honeycomb (NHC) array of holes. The period of the magneto-resistance, H=H_M=h/2eS where S is the area of a unit cell of holes, indicates the field driven transitions are boson dominated. The field-dependent resistance follows R(T)=R_0(H)exp(T_0(H)/T) on both sides of the transition so that the evolution between these states is controlled by the vanishing of T_0 to0. We compare our results to the thickness driven transition in NHC films and the field driven transitions in unpatterned Bi films, other materials, and Josephson junction arrays. Our results suggest a structural source for similar behavior found in some materials and that despite the clear bosonic nature of the SITs, quasiparticle degrees of freedom likely also play an important part in the evolution of the SIT.
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We report magnetotransport measurements of the critical field behavior of thin Al films deposited onto multiply connected substrates. The substrates were fabricated via a standard electrochemical process that produced a triangular array of 66 nm diameter holes having a lattice constant of 100 nm. The critical field transition of the Al films was measured near $T_c$ as a function of field orientation relative to the substrate normal. With the field oriented along the normal ($theta=0$), we observe reentrant superconductivity at a characteristic matching field $H_m=0.22,mathrm{T}$, corresponding to one flux quantum per hole. In tilted fields, the position $H^*$ of the reentrance feature increases as $sec(theta)$, but the resistivity traces are somewhat more complex than those of a continuous superconducting film. We show that when the tilt angle is tuned such that $H^*$ is of the order of the upper critical field $H_c$, the entire critical region is dominated by the enhanced dissipation associated with a sub-matching perpendicular component of the applied field. At higher tilt angles a local maximum in the critical field is observed when the perpendicular component of the field is equal to the matching field.
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We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 k{Omega}, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.
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