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Register a new userDeformation effects in the $^{28}$Si+$^{12}$C and $^{28}$Si+$^{28}$Si reaction Search
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The possible occurence of highly deformed configurations is investigated in the $^{40}$Ca and $^{56}$Ni di-nuclear systems as formed in the $^{28}$Si+$^{12}$C,$^{28}$Si reactions by using the properties of emitted light charged particles. Inclusive as well as exclusive data of the heavy fragments and their associated light charged particles have been collected by using the {sc ICARE} charged particle multidetector array. The data are analysed by Monte Carlo CASCADE statistical-model calculations using a consistent set of parameters with spin-dependent level densities. Significant deformation effects at high spin are observed as well as an unexpected large $^{8}$Be cluster emission of a binary nature.
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Velocity and energy spectra of the light charged particles (protons and $alpha$-particles) emitted in the $^{28}$Si(E$_{lab}$ = 112 MeV) + $^{28}$Si reaction have been measured at the Strasbourg VIVITRON Tandem facility. The ICARE charged particle multidetector array was used to obtain exclusive spectra of the light particles in the angular range 15 - 150 degree and to determine the angular correlations of these particles with respect to the emission angles of the evaporation residues. The experimental data are analysed in the framework of the statistical model. The exclusive energy spectra of $alpha$-particles emitted from the $^{28}$Si + $^{28}$Si compound system are generally well reproduced by Monte Carlo calculations using spin-dependent level densities. This spin dependence approach suggests the onset of large deformations at high spin. A re-analysis of previous $alpha$-particle data from the $^{30}$Si + $^{30}$Si compound system, using the same spin-dependent parametrization, is also presented in the framework of a general discussion of the occurrence of large deformation effects in the A$_{CN}$ ~ 60 mass region.
The possible occurrence of highly deformed configurations in the $^{40}$Ca di-nuclear system formed in the $^{28}$Si + $^{12}$C reaction is investigated by analyzing the spectra of emitted light charged particles. Both inclusive and exclusive measurements of the heavy fragments (A $geq$ 10) and their associated light charged particles (protons and $alpha$ particles) have been made at the IReS Strasbourg {sc VIVITRON} Tandem facility at bombarding energies of $E_{lab} (^{28}$Si) = 112 MeV and 180 MeV by using the {sc ICARE} charged particle multidetector array. The energy spectra, velocity distributions, and both in-plane and out-of-plane angular correlations of light charged particles are compared to statistical-model calculations using a consistent set of parameters with spin-dependent level densities. The analysis suggests the onset of large nuclear deformation in $^{40}$Ca at high spin.
Inclusive as well as exclusive energy spectra of the light charged particles emitted in the $^{28}$Si ($E_{lab}$=112.6 MeV) + $^{12}$C reaction has been measured using the {bf ICARE} multidetector array. The data have been analysed by statistical-model calculations using a spin-dependent level density parametrization. The results suggest significant deformation effects at high spin and cluster emission of $^8$Be.
The energies of the excited states in very neutron-rich $^{42}$Si and $^{41,43}$P have been measured using in-beam $gamma$-ray spectroscopy from the fragmentation of secondary beams of $^{42,44}$S at 39 A.MeV. The low 2$^+$ energy of $^{42}$Si, 770(19) keV, together with the level schemes of $^{41,43}$P provide evidence for the disappearance of the Z=14 and N=28 spherical shell closures, which is ascribed mainly to the action of proton-neutron tensor forces. New shell model calculations indicate that $^{42}$Si is best described as a well deformed oblate rotor.
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Delta=0.4$ nm and a correlation length of $Lambda=3.4$ nm. An upper bound for valley splitting energy of 480 $mu$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.
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