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Register a new userQuantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$
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We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Delta=0.4$ nm and a correlation length of $Lambda=3.4$ nm. An upper bound for valley splitting energy of 480 $mu$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.
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The possible occurence of highly deformed configurations is investigated in the $^{40}$Ca and $^{56}$Ni di-nuclear systems as formed in the $^{28}$Si+$^{12}$C,$^{28}$Si reactions by using the properties of emitted light charged particles. Inclusive as well as exclusive data of the heavy fragments and their associated light charged particles have been collected by using the {sc ICARE} charged particle multidetector array. The data are analysed by Monte Carlo CASCADE statistical-model calculations using a consistent set of parameters with spin-dependent level densities. Significant deformation effects at high spin are observed as well as an unexpected large $^{8}$Be cluster emission of a binary nature.
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $sim$ 2 V/$mu$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $eta_a=-1.9pm0.2times10^{-3} mu$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.
Velocity and energy spectra of the light charged particles (protons and $alpha$-particles) emitted in the $^{28}$Si(E$_{lab}$ = 112 MeV) + $^{28}$Si reaction have been measured at the Strasbourg VIVITRON Tandem facility. The ICARE charged particle multidetector array was used to obtain exclusive spectra of the light particles in the angular range 15 - 150 degree and to determine the angular correlations of these particles with respect to the emission angles of the evaporation residues. The experimental data are analysed in the framework of the statistical model. The exclusive energy spectra of $alpha$-particles emitted from the $^{28}$Si + $^{28}$Si compound system are generally well reproduced by Monte Carlo calculations using spin-dependent level densities. This spin dependence approach suggests the onset of large deformations at high spin. A re-analysis of previous $alpha$-particle data from the $^{30}$Si + $^{30}$Si compound system, using the same spin-dependent parametrization, is also presented in the framework of a general discussion of the occurrence of large deformation effects in the A$_{CN}$ ~ 60 mass region.
Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into a single silicon platform offering substantially expanded capabilities. A number of silicon defects are known to have spin-selective optical transitions, although very few of these are known to be in the highly desirable telecommunications bands, and those that do often do not couple strongly to light. Here we characterize the T center in silicon, a highly stable silicon defect which supports a short-lived bound exciton that upon recombination emits light in the telecommunications O-band. In this first study of T centers in $^{28}$Si, we present the temperature dependence of the zero phonon line, report ensemble zero phonon linewidths as narrow as 33(2) MHz, and elucidate the excited state spectrum of the bound exciton. Magneto-photoluminescence, in conjunction with magnetic resonance, is used to observe twelve distinct orientational subsets of the T center, which are independently addressable due to the anisotropic g factor of the bound excitons hole spin. The T center is thus a promising contender for the hybridization of silicons two leading quantum technology platforms.
We suggest a new method of quantum information processing based on the precise placing of P-31 isotope atoms in a quasi-one-dimensional Si-28 nanowire using isotope engineering and neutron-transmutation doping of the grown structures. In our structure, interqubit entanglement is based on the indirect interaction of P-31 nuclear spins with electrons localized in a nanowire. This allows one to control the coupling between distant qubits and between qubits separated by non-qubit neighboring nodes. The suggested method enables one to fabricate structures using present-day nanolithography. Numerical estimates show the feasibility of the proposed device and method of operation.
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