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Register a new userWeak-localization corrections to the conductivity of double quantum wells
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The weak-localization contribution deltasigma(B) to the conductivity of a tunnel-coupled double-layer electron system is evaluated and its behavior in weak magnetic fields B perpendicular or parallel to the layers is examined. In a perpendicular field B, delta sigma(B) increases and remains dependent on tunneling as long as the magnetic field is smaller than hbar/e D tau_t, where D is the in-plane diffusion coefficient and tau_t the interlayer tunneling time. If tau_t is smaller than the inelastic scattering time, a parallel magnetic field also leads to a considerable increase of the concuctivity starting with a B**2 law and saturating at fields higher than hbar/e Z (D tau_t)**(1/2), where Z is the interlayer distance. In the limit of coherent tunneling, when tau_t is comparable to elastic scattering time, delta sigma(B) differs from that of a single-layer system due to ensuing modifications of the diffusion coefficient. A possibility to probe the weak-localization effect in double-layer systems by the dependence of the conductivity on the gate-controlled level splitting is discussed.
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We study the thermal conductivity in disordered $s$-wave superconductors. Expanding on previous works for normal metals, we develop a formalism that tackles particle diffusion as well as the weak localization (WL) and weak anti-localization (WAL) effects. Using a Greens functions diagrammatic technique, which takes into account the superconducting nature of the system by working in Nambu space, we identify the systems low-energy modes, the diffuson and the Cooperon. The time scales that characterize the diffusive regime are energy dependent; this is in contrast with the the normal state, where the relevant time scale is the mean free time $tau_e$, independent of energy. The energy dependence introduces a novel energy scale $varepsilon_*$, which in disordered superconductors ($tau_e Deltall 1$, with $Delta$ the gap) is given by $varepsilon_* = sqrt{Delta/tau_e}$. From the diffusive behavior of the low-energy modes, we obtain the WL correction to the thermal conductivity. We give explicitly expressions in two dimensions. We determine the regimes in which the correction depends explicitly on $varepsilon_*$ and propose an optimal regime to verify our results in an experiment.
It is well known that conductivity of disordered metals is suppressed in the limit of low frequencies and temperatures by quantum corrections. Although predicted by theory to exist up to much higher energies, such corrections have so far been experimentally proven only for $lesssim$80 meV. Here, by a combination of transport and optical studies, we demonstrate that the quantum corrections are present in strongly disordered conductor MoC up to at least $sim$4 eV, thereby extending the experimental window where such corrections were found by a factor of 50. The knowledge of both, the real and imaginary parts of conductivity, enables us to identify the microscopic parameters of the conduction electron fluid. We find that the conduction electron density of strongly disordered MoC is surprisingly high and we argue that this should be considered a generic property of metals on the verge of disorder-induced localization transition.
The results of experimental study of interference induced magnetoconductivity in narrow quantum well HgTe with the normal energy spectrum are presented. Analysis is performed with taking into account the conductivity anisotropy. It is shown that the fitting parameter tau_phi corresponding to the phase relaxation time increases in magnitude with the increasing conductivity (sigma) and decreasing temperature following the 1/T law. Such a behavior is analogous to that observed in usual two-dimensional systems with simple energy spectrum and corresponds to the inelasticity of electron-electron interaction as the main mechanism of the phase relaxation. However, it drastically differs from that observed in the wide HgTe quantum wells with the inverted spectrum, in which tau_phi being obtained by the same way is practically independent of sigma. It is presumed that a different structure of the electron multicomponent wave function for the inverted and normal quantum wells could be reason for such a discrepancy.
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrodinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment.
In the present work, we were able to identify and characterize a new source of in-plane optical anisotropies (IOAs) occurring in asymmetric DQWs; namely a reduction of the symmetry from $D_{2d}$ to $C_{2v}$ as imposed by asymmetry along the growth direction. We report on reflectance anisotropy spectroscopy (RAS) of double GaAs quantum wells (DQWs) structures coupled by a thin ($<2$ nm) tunneling barrier. Two groups of DQWs systems were studied: one where both QWs have the same thickness (symmetric DQW) and another one where they have different thicknesses (asymmetric DQW). RAS measures the IOAs arising from the intermixing of the heavy- and light- holes in the valence band when the symmetry of the DQW system is lowered from $D_{2d}$ to $C_{2v}$. If the DQW is symmetric, residual IOAs stem from the asymmetry of the QW interfaces; for instance, associated to Ga segregation into the AlGaAs layer during the epitaxial growth process. In the case of an asymmetric DQW with QWs with different thicknesses, the AlGaAs layers (that are sources of anisotropies) are not distributed symmetrically at both sides of the tunneling barrier. Thus, the system losses its inversion symmetry yielding an increase of the RAS strength. The RAS line shapes were compared with reflectance spectra in order to assess the heavy- and light- hole mixing induced by the symmetry breakdown. The energies of the optical transitions were calculated by numerically solving the one-dimensional Schrodinger equation using a finite-differences method. Our results are useful for interpretation of the transitions occurring in both, symmetric and asymmetric DQWs.
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