Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userBasic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
63
0
0.0
(
0
)
Authors
G. Schmidt
Ask ChatGPT about the research
No Arabic abstract
We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1%, only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.
rate research
Read More
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology.
Creating, manipulating and detecting spin polarized carriers are the key elements of spin based electronics. Most practical devices use a perpendicular geometry in which the spin currents, describing the transport of spin angular momentum, are accompanied by charge currents. In recent years, new sources of pure spin currents, i.e., without charge currents, have been demonstrated and applied. In this paper, we demonstrate a conceptually new source of pure spin current driven by the flow of heat across a ferromagnetic/non-magnetic metal (FM/NM) interface. This spin current is generated because the Seebeck coefficient, which describes the generation of a voltage as a result of a temperature gradient, is spin dependent in a ferromagnet. For a detailed study of this new source of spins, it is measured in a non-local lateral geometry. We developed a 3D model that describes the heat, charge and spin transport in this geometry which allows us to quantify this process. We obtain a spin Seebeck coefficient for Permalloy of -3.8 microvolt/Kelvin demonstrating that thermally driven spin injection is a feasible alternative for electrical spin injection in, for example, spin transfer torque experiments.
We report room temperature electrical detection of spin injection from a ferromagnetic insulator (YIG) into a ferromagnetic metal (Permalloy, Py). Non-equilibrium spins with both static and precessional spin polarizations are dynamically generated by the ferromagnetic resonance of YIG magnetization, and electrically detected by Py as dc and ac spin currents, respectively. The dc spin current is electrically detected via the inverse spin Hall effect of Py, while the ac spin current is converted to a dc voltage via the spin rectification effect of Py which is resonantly enhanced by dynamic exchange interaction between the ac spin current and the Py magnetization. Our results reveal a new path for developing insulator spintronics, which is distinct from the prevalent but controversial approach of using Pt as the spin current detector.
Composite fermion metal states emerge in quantum Hall bilayers at total Landau level filling factor $ u_T$=1 when the tunneling gap collapses by application of in-plane components of the external magnetic field. Evidence of this transformation is found in the continua of spin excitations observed by inelastic light scattering below the spin-wave mode at the Zeeman energy. The low-lying spin modes are interpreted as quasiparticle excitations with simultaneous changes in spin orientation and composite fermion Landau level index.
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc, of the electroluminescence (EL) shows that the tunneling spin polarization reflects Fe majority spin. Pcirc tracks the Fe magnetization, confirming that the spin-polarized electrons radiatively recombining in the Si originate from the Fe. A rate equation analysis provides a lower bound of 30% for the electron spin polarization in the Si at 5 K.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
