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Register a new userResistive upper critical fields and irreversibility lines of optimally-doped high-T_c cuprates
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We present the resistively-determined upper critical field H^{rho}_{c2}(T) and the irreversibility lines H^{rho}_{irr}(T) of various high-T_c cuprates, deduced from measurements in 61-T pulsed magnetic fields applied parallel to the c-axis. The SHAPE of both H^{rho}_{c2}(T) and H^{rho}_{irr}(T) depends monotonically on the anisotropy of the material and none of the samples show saturation of H^{rho}(T) at low temperatures. The anomalous positive curvature, d^2 H^{rho}/dT^2 > 0, is the strongest in materials with the largest normal-state anisotropy, regardless of whether anisotropy is varied by changing the carrier concentration or by comparing a variety of optimally-doped compounds.
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We report resistivity and upper critical field B_c2(T) data for disordered (As deficient) LaO_0.9F_0.1FeAs_1-delta in a wide temperature and high field range up to 60 T. These samples exhibit a slightly enhanced superconducting transition at T_c = 28.5 K and a significantly enlarged slope dB_c2/dT = -5.4 T/K near T_c which contrasts with a flattening of B_c2(T) starting near 23 K above 30 T. The latter evidences Pauli limiting behaviour (PLB) with B_c2(0) approximately 63 T. We compare our results with B_c2(T)-data from the literature for clean and disordered samples. Whereas clean samples show almost no PLB for fields below 60 to 70 T, the hitherto unexplained pronounced flattening of B_c2(T) for applied fields H II ab observed for several disordered closely related systems is interpreted also as a manifestation of PLB. Consequences are discussed in terms of disorder effects within the frames of (un)conventional superconductivity, respectively.
We present a detailed study of the electrical transport properties of YBa2Cu3O7-{delta} thin film. The irreversibility fields ({mu}_0 H_irr), upper critical fields ({mu}_0 H_C2), penetration depths ({lambda}) and coherence lengths ({xi} ) of the YBa2Cu3O7-{delta} materials are deduced from the resistivity curves. Itis observed that {mu}_0 H_irr, {mu}_0 H_C2 and {Delta}Tc of the film strongly depend on the direction and strength of the field. The coherence length {xi} (0) and penetration depth {lambda} (0) values at T = 0 K has been calculated from the irreversibility fields ({mu}_0 H_irr) and upper critical fields ({mu}_0 H_C2) respectively. Based on all the results, the change of the superconducting properties as a function of the magnetic field direction presents the anisotropy of the sample produced.
The density-of-states at the Fermi energy, $N(E_F)$, is low in doped superconducting semiconductors and high-$T_C$ cuprates. This contrasts with the common view that superconductivity requires a large electron-boson coupling $lambda$ and therefore also a large $N(E_F)$. However, the generic Fermi surfaces (FS) of these systems are relatively simple. Here is presented arguments showing that going from a 3-dimensional multi-band FS to a 2-dimensional and simple FS is energetically favorable to superconductivity. Nesting and few excitations of bosons compensate for a low $N(E_F)$. The typical behavior of the 2-dimensional FS for cuprates, and small 3-dimensional FS pockets in doped semiconductors and diamond, leads to $T_C$ variations as a function of doping in line with what has been observed. Diamond is predicted to attain higher $T_C$ from electron doping than from hole doping, while conditions for superconductivity in Si and Ge are less favorable. A high-$T_C$ material should ideally have few flat and parallel FS sheets with a reasonably large $N(E_F)$.
A possibility of holon (boson) pair condensation is explored for hole doped high T_c cuprates, by using the U(1) slave-boson representation of the t-J Hamiltonian with the inclusion of hole-hole repulsion. A phase diagram of the hole doped high T_c cuprates is deduced by allowing both the holon pairing and spinon pairing. It is shown that the spin gap size remains nearly unchanged below the holon pair condensation temperature. We find that the s-wave holon pairing under the condition of d-wave singlet pairing is preferred, thus allowing d-wave hole pairing.
Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.
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