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Register a new userComparison of the fluctuation influence on the resistive properties of the mixed state of BiSrCaCuO and of thin films of conventional superconductor
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The resistive properties of layered HTSC BiSrCaCuO in the mixed state are compared with those of thin films of conventional superconductors with weak disorders (amorphous Nb_{1-x}0_{x} films) and with strong disorders (Nb_{1-x}O_{x} films with small grain structure). The excess conductivity is considered as a function of superconducting electron density and phase coherence length. It is shown that the transition to the Abrikosov state differs from the ideal case both in BiSrCaCuO and Nb_{1-x}O_{x} films, i.e. the appearance of long-range phase coherence is continuous transition in both cases. The quantitative difference between thin films with weak and strong disorders is greater than the one between layered HTSC and conventional superconductors, showing that the dimensionality of the system, rather than the critical temperature, is the key factor ruling fluctuation effects
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We investigate the influence of carbon-ion irradiation on the superconducting critical properties of MgB$_2$ thin films. MgB$_2$ films of two thicknesses viz. 400 nm (MB400nm) and 800 nm (MB800nm) were irradiated by 350 keV C ions having a wide range of fluence, 1 x 10$^{13}$ - 1 x 10$^{15}$ C atoms/cm$^2$. The mean projected range ($R_p$) of 350 keV C ions in MgB$_2$ is 560 nm, thus the energetic C ions will pass through the MB400nm, whereas the ions will remain into the MB800nm. The superconducting transition temperature ($T_c$), upper critical field ($H_{c2}$), $c$-axis lattice parameter, and corrected residual resistivity ($rho_{corr}$) of both the films showed similar trends with the variation of fluence. However, a disparate behavior in the superconducting phase transition was observed in the MB800nm when the fluence was larger than 1 x 10$^{14}$ C atoms/cm$^2$ because of the different Tcs between the irradiated and non-irradiated parts of the film. Interestingly, the superconducting critical properties, such as $T_c$, $H_{c2}$, and $J_c$, of the irradiated MgB$_2$ films, as well as the lattice parameter, were almost restored to those in the pristine state after a thermal annealing procedure. These results demonstrate that the atomic lattice distortion induced by C-ion irradiation is the main reason for the change in the superconducting properties of MgB$_2$ films.
FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrates shows no influence on the lattice parameters of the films, whereas the type of substrates affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc({theta}) at {theta} = 180{deg} (H || c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc({theta}) peaks for H || c were observed in films on CaF2 and LaAlO3. Jc({theta}) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau (AGL) approach with appropriate anisotropy ratio {gamma}J. The scaling parameter {gamma}J is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates.
Single phase, c-axis oriented, e-doped, Sr1-xLaxCuO2 thin films were epitaxially grown on KTaO3 and DyScO3 substrates by reactive rf sputtering. As-grown films being insulating due to oxygen excess, oxygen reduction is necessary to observe superconductivity. Two different procedures were employed to reach superconductivity. On one hand an in-situ reduction process was conducted on a series of films deposited on both types of substrates. On the other hand, an ex-situ reduction procedure was performed sequentially on a single film deposited on DyScO3. The study of the influence of oxygen reduction on the structural and electronic properties of the thin films is presented and discussed.
Both DC and AC magnetization measurements were performed on the NdFeAsO0.88F0.12 superconductor to investigate the influence of magnetism on the superconducting properties of this system. The crossover of the ZFC and FC magnetic susceptibility curves under 7.5KOe was observed. The imaginary component of the first harmonics of the AC magnetic susceptibility, increases with the increasing DC field below 10K and shows frequency dependency under 7.5KOe at low temperature. The paramagnetism of Nd3+ ions tilts the magnetic hysteresis loops and broadens the hysteresis width. After correction for the paramagnetism, the field and temperature dependence of intrinsic Jcm was obtained and compared with the experimentally obtained total Jcm. The origin of the abnormal behavior of magnetization was investigated and attributed to a magnetic background, which was speculated to be caused by the spin-glass state. However, this magnetic background does not affect the flux pinning properties in this sample. The related mechanism was discussed.
The influence of room-temperature annealing on the parameters of the basal-plane electrical resistance of underdoped YBa$_2$Cu$_3$O$_{7-delta}$ and HoBa$_2$Cu$_3$O$_{7-delta}$ single crystals in the normal and superconducting states is investigated. The form of the derivatives $drho(T)/dT$ makes it possible to determine the onset temperature of the fluctuation conductivity and indicates a nonuniform distribution of the labile oxygen. Annealing has been revealed to lead to a monotonic decrease in the oxygen deficiency, that primarily manifests itself as a decrease of the residual resistance, an increase of $T_c$, and a decrease of the Debye temperature.
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