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Register a new userInfluence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films
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FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrates shows no influence on the lattice parameters of the films, whereas the type of substrates affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc({theta}) at {theta} = 180{deg} (H || c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc({theta}) peaks for H || c were observed in films on CaF2 and LaAlO3. Jc({theta}) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau (AGL) approach with appropriate anisotropy ratio {gamma}J. The scaling parameter {gamma}J is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates.
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We investigate the influence of carbon-ion irradiation on the superconducting critical properties of MgB$_2$ thin films. MgB$_2$ films of two thicknesses viz. 400 nm (MB400nm) and 800 nm (MB800nm) were irradiated by 350 keV C ions having a wide range of fluence, 1 x 10$^{13}$ - 1 x 10$^{15}$ C atoms/cm$^2$. The mean projected range ($R_p$) of 350 keV C ions in MgB$_2$ is 560 nm, thus the energetic C ions will pass through the MB400nm, whereas the ions will remain into the MB800nm. The superconducting transition temperature ($T_c$), upper critical field ($H_{c2}$), $c$-axis lattice parameter, and corrected residual resistivity ($rho_{corr}$) of both the films showed similar trends with the variation of fluence. However, a disparate behavior in the superconducting phase transition was observed in the MB800nm when the fluence was larger than 1 x 10$^{14}$ C atoms/cm$^2$ because of the different Tcs between the irradiated and non-irradiated parts of the film. Interestingly, the superconducting critical properties, such as $T_c$, $H_{c2}$, and $J_c$, of the irradiated MgB$_2$ films, as well as the lattice parameter, were almost restored to those in the pristine state after a thermal annealing procedure. These results demonstrate that the atomic lattice distortion induced by C-ion irradiation is the main reason for the change in the superconducting properties of MgB$_2$ films.
We report on measurements of the superconducting properties of FeSe05Te05 thin films grown on lanthanum aluminate. The films have high transition temperatures (above 19 K) and sharp resistive transitions in fields up to 15 T. The temperature dependence of the upper critical field and the irreversibility lines are steep and anisotropic, as recently reported for single crystals. The critical current densities, assessed by magnetization measurements in a vector VSM, were found to be well above 10^9 Am-2 at low temperatures. In all samples, the critical current as a function of field orientation has a maximum, when the field is oriented parallel to the film surface. The maximum indicates the presence of correlated pinning centers. A minimum occurs in three films, when the field is applied perpendicular to the film plane. In the forth film, instead, a local maximum caused by c-axis correlated pinning centers was found at this orientation. The irradiation of two films with fast neutrons did not change the properties drastically, where a maximum enhancement of the critical current by a factor of two was found.
The newly found superconductivity in infinite-layer nickelate superconducting films has attracted much attention, because their crystalline and electronic structures are similar to high-$T_c$ cuprate superconductors. The upper critical field can provide much information on superconductivity, but detailed experimental data are still lacking in these films. Here we present temperature and angle dependence of resistivity measured under different magnetic fields ($H$) in Nd$_{0.8}$Sr$_{0.2}$NiO$_{2}$ thin films. The onset superconducting transition occurs at about 16.2 K at 0 T. Temperature dependent upper critical fields determined by using a criterion very close to the onset transition show a clear negative curvature near the critical transition temperature, which is explained as the consequence of the paramagnetically limited effect on superconductivity. The temperature dependent anisotropy of the upper critical field is obtained from resistivity data, which yields a value decreasing from 3 to 1.2 with lowering temperature. This can be explained by a variable contribution from the orbital limit effect on upper critical field. The angle dependent resistivity at a fixed temperature and different magnetic fields cannot be scaled to one curve, which deviates from the prediction of the anisotropic Ginzburg-Landau theory. However, at low temperatures, the increased resistivity by magnetic field can be scaled by the parameter $H^beta |costheta|$ ($1<beta<6$) with $theta$ the angle enclosed between $c$-axis and the applied magnetic field. As the first detailed study on the upper critical field of the nickelate thin films, our results clearly indicate a small anisotropy and paramagnetically limited effect of superconductivity in nickelate superconductors.
Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films by annealing in quartz ampoules containing elemental alkali metals at <350 degree centigrade. No significant change in transition temperature (Tc) was observed, in contrast to an earlier report of very high Tc (>50 K) for similar experiments on MgB2 powders. The lack of a significant change in Tc and intra-granular carrier scattering suggests that Rb and Cs diffuse into the film, but do not enter the grains. Instead, the observed changes in the electrical properties, including a significant drop in Jc and an increase in delta rho (rho300-rho40), arise from a decrease in inter-granular connectivity due to segregation of the heavy alkaline metals and other impurities (i.e. C and O) introduced into the grain boundary regions during the anneals.
Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental techniques: X-rays diffraction, reflection high energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The substrate temperature during the deposition was found to be the main parameter governing sample morphology and superconducting critical temperature. Films obtained in the optimal conditions show an epitaxial growth with c axis perpendicular to the film surface and the a and b axis parallel to the substrates one, without the evidence of any other orientation. Moreover, such films show a metallic behavior over the whole measured temperature range and critical temperature above 17K, which is higher than the target one.
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