No Arabic abstract
Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as sigma (n_s,T)=sigma (n_s,T=0)+A(n_s)T^2 (n_s-carrier density) to a non-zero value as temperature T->0. In 2D, the existence of a metal with dsigma/dT>0 is very surprising. In addition, a novel type of a metal-insulator transition obtains, which is unlike any known quantum phase transition in 2D.
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as sigma (n_s,T,B=0)=sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zero value as temperature T->0. Very near the B=0 metal-insulator transition, there is a large initial drop in sigma with increasing B, followed by a much weaker sigma (B). At higher n_s, the initial drop of MC is less pronounced.
We study the effect of the disorder on the metallic behavior of a two-dimensional electron system in silicon. The temperature dependence of conductivity $sigma (T)$ was measured for different values of substrate bias, which changes both potential scattering and the concentration of disorder-induced local magnetic moments. We find that the latter has a much more profound effect on $dsigma/dT$. In fact, the data suggest that in the limit of $Tto 0$ the metallic behavior, as characterized by $dsigma/dT < 0$, is suppressed by an arbitrarily small amount of spin flip scattering by local magnetic moments.
The temperature dependence of conductivity $sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by disorder, and their number was varied using substrate bias. The data suggest that in the limit of $Tto 0$ the metallic behavior, as characterized by $dsigma/dT < 0$, is suppressed by an arbitrarily small amount of scattering by local magnetic moments.
Using lattice simulations, we study the infrared behavior of a particularly interesting SU(2) gauge theory, with six massless Dirac fermions in the fundamental representation. We compute the running gauge coupling derived non-perturbatively from the Schrodinger functional of the theory, finding no evidence for an infrared fixed point up through gauge couplings of order 20. This implies that the theory either is governed in the infrared by a fixed point of considerable strength, unseen so far in non-supersymmetric gauge theories, or breaks its global chiral symmetries producing a large number of composite Nambu-Goldstone bosons relative to the number of underlying degrees of freedom. Thus either of these phases exhibits novel behavior.
Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality.