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Register a new userMelting and Pressure-Induced Amorphization of Quartz
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It has recently been shown that amorphization and melting of ice were intimately linked. In this letter, we infer from molecular dynamics simulations on the SiO2 system that the extension of the quartz melting line in the metastable pressure-temperature domain is the pressure-induced amorphization line. It seems therefore likely that melting is the physical phenomenon responsible for pressure induced amorphization. Moreover, we show that the structure of a pressure glass is similar to that of a very rapidly (1e+13 to 1e+14 kelvins per second) quenched thermal glass.
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The structural phase transitions of single crystal TiO2-B nanoribbons were investigated in-situ at high-pressure using the synchrotron X-ray diffraction and the Raman scattering. Our results have shown a pressure-induced amorphization (PIA) occurred in TiO2-B nanoribbons upon compression, resulting in a high density amorphous (HDA) form related to the baddeleyite structure. Upon decompression, the HDA form transforms to a low density amorphous (LDA) form while the samples still maintain their pristine nanoribbon shape. HRTEM imaging reveals that the LDA phase has an {alpha}-PbO2 structure with short range order. We propose a homogeneous nucleation mechanism to explain the pressure-induced amorphous phase transitions in the TiO2-B nanoribbons. Our study demonstrates for the first time that PIA and polyamorphism occurred in the one-dimensional (1D) TiO2 nanomaterials and provides a new method for preparing 1D amorphous nanomaterials from crystalline nanomaterials.
Nuclear resonant inelastic x-ray scattering on quartz structured 57FePO4 as a function of pressure, up to 8 GPa reveals hardening of the low-energy phonons under applied pressures up to 1.5 GPa, followed by a large softening at 1.8 GPa upon approaching the phase transition pressure of ~2 GPa. The pressure-induced phase transitions in quartz-structured compounds have been predicted to be related to a soft phonon mode at the Brillouin-zone boundary (1/3, 1/3, 0) and to the break-down of the Born-stability criteria. Our results provide the first experimental evidence of this predicted phonon softening.
We observe that pressure-induced amorphization of Ga2SeTe2 (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with periodic and semi-periodic two-dimensional vacancy structures become amorphous around 10-11 GPa in contrast to those with aperiodic structures, which amorphize around 7-8 GPa. The result is a notable instance of altering material phase-change properties via rearrangement of stoichiometric vacancies as opposed to adjusting their concentrations. Based on our experimental findings, we posit that periodic two-dimensional vacancy structures in Ga2SeTe2 provide an energetically preferred crystal lattice that is less prone to collapse under applied pressure. This is corroborated through first-principles electronic structure calculations, which demonstrate that the energy stability of III-VI structures under hydrostatic pressure is highly dependent on the configuration of intrinsic vacancies.
Some results on damage build up in, and amorphization of, Si, induced by 25-30 keV Al$_5^-$, Si$_5^-$ and Cs$^-$ ions, at room temperature, are reported. We show that at low energy, amorphization is a nucleation and growth process, based on the direct impact mechanism. With an Avrami exponent $sim 1.6$, the growth towards amorphization seems to be diffusion limited. A transition to a completely amorphized state is indicated at a dose exceeding 17 eV/atom, which is higher than 6-12 eV/atom as predicted by simulations. The observed higher threshold could be due to temperature effects although an underestimation of keV-energy recoils, in simulation, may not be ruled out.
Melting of orthorhombic boron silicide B6Si has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements and quenching. It has been found that in the 2.6-7.7 GPa range B6Si melts congruently, and the melting curve exhibits negative slope of -31(2) K/GPa that points to a higher density of the melt as compared to the solid phase. At very high temperatures B6Si melt appears to be unstable and undergoes disproportionation into silicon and boron-rich silicides. The onset temperature of disproportionation strongly depends on pressure, and the corresponding low-temperature boundary exhibits negative slope of -92(3) K/GPa which is indicative of significant volume decrease in the course of B6Si melt decomposition.
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