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Register a new userIs a doped Kondo insulator different from doped Silicon?
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J. F. DiTusa
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We have observed the metal-insulator transition in the strongly correlated insulator FeSi with the chemical substitution of Al at the Si site. The magnetic susceptibility, heat capacity, and field dependent conductivity are measured for Al concentrations ranging from 0 to 0.08. For concentrations greater than 0.01 we find metallic properties quantitatively similar to those measured in Si:P with the exception of a greatly enhanced quasiparticle mass. Below 2 K the temperature and field dependent conductivity can be completely described by the theory of disordered Fermi Liquids.
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We report the existence of the charge density wave (CDW) in the ground state of 1D Kondo lattice model at the filling of n=0.75 in the weak coupling region. The CDW is driven by the effective Coulomb repulsion mediated by the localized spins. Based on our numerical results using the density matrix renormalization group method, we show that the CDW phase appears in the paramagnetic region previously known as the Tomonaga-Luttinger liquid. The emergence of this phase serves as an example of CDW phase induced without bare repulsive interactions, and enriches the phase diagram of the 1D Kondo lattice model.
We study one-dimensional Kondo Lattices (KL) which consist of itinerant electrons interacting with Kondo impurities (KI) - localized quantum magnetic moments. We focus on KL with isotropic exchange interaction between electrons and KI and with a high KI density. The latter determines the principal role of the indirect interaction between KI for the low energy physics. Namely, the Kondo physics becomes suppressed and all properties are governed by spin ordering. We present a first-ever comprehensive analytical theory of such KL at an arbitrary doping and predict a variety of regimes with different electronic phases. They range from commensurate insulators (at filling factors 1/2, 1/4 and 3/4) to metals with strongly interacting conduction electrons (close to these three special cases) to an exotic phase of a helical metal. The helical metals can provide a unique platform for realization of an emergent protection of ballistic transport in quantum wires. We compare out theory with previously obtained numerical results and discuss possible experiments where the theory could be tested.
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of a device. Similarly, as dopants can turn a Mott insulator into a high temperature superconductor, their electronic behaviour at the atomic scale is of much interest. Due to limited time resolution of conventional scanning tunnelling microscopes, most atomic scale studies in these systems focussed on the time averaged effect of dopants on the electronic structure. Here, by using atomic scale shot-noise measurements in the doped Mott insulator Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$, we visualize sub-nanometer sized objects where remarkable dynamics leads to an enhancement of the tunnelling current noise by at least an order of magnitude. From the position, current and energy dependence we argue that these defects are oxygen dopant atoms that were unaccounted for in previous scanning probe studies, whose local environment leads to charge dynamics that strongly affect the tunnelling mechanism. The unconventional behaviour of these dopants opens up the possibility to dynamically control doping at the atomic scale, enabling the direct visualization of the effect of local charging on e.g. high T$_{text{c}}$ superconductivity.
How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-$T_c$ cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La$_{2-x}$Sr$_x$CuO$_4$ ($0 le x le 0.15$). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-$T_c$ cuprates.
We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.
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