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Register a new userEmergence of Quasiparticles in a Doped Mott Insulator
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How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-$T_c$ cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La$_{2-x}$Sr$_x$CuO$_4$ ($0 le x le 0.15$). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-$T_c$ cuprates.
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We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T$_c$ cuprates. Disorder and impurities only play a minor and assistant role here.
The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator transition is approached in a non-uniform way in different regions of the momentum space. This gives rise to a breakup of the Fermi surface and to the formation of hot and cold regions, whose position depends on the hole or electron like nature of the carriers in the system.
The issues of single particle coherence and its interplay with singlet pairing are studied within the slave boson gauge theory of a doped Mott insulator. Prior work by one of us (T. Senthil, arXiv:0804.1555) showed that the coherence scale below which Landau quasiparticles emerge is parametrically lower than that identified in the slave boson mean field theory. Here we study the resulting new non-fermi liquid intermediate temperature regime characterized by a single particle scattering rate that is linear in temperature ($T$). In the presence of a d-wave pair amplitude this leads to a pseudogap state with $T$ dependent Fermi arcs near the nodal direction. Implications for understanding the cuprates are discussed.
We study a ground-state ansatz for the single-hole doped $t$-$J$ model in two dimensions via a variational Monte Carlo (VMC) method. Such a single-hole wave function possesses finite angular momenta generated by hidden spin currents, which give rise to a novel ground state degeneracy in agreement with recent exact diagonalization (ED) and density matrix renormalization group (DMGR) results. We further show that the wave function can be decomposed into a quasiparticle component and an incoherent momentum distribution in excellent agreement with the DMRG results up to an $8times 8 $ lattice. Such a two-component structure indicates the breakdown of Landaus one-to-one correspondence principle, and in particular, the quasiparticle spectral weight vanishes by a power law in the large sample-size limit. By contrast, turning off the phase string induced by the hole hopping in the so-called $sigmacdot ttext{-}J$ model, a conventional Bloch-wave wave function with a finite quasiparticle spectral weight can be recovered, also in agreement with the ED and DMRG results. The present study shows that a singular effect already takes place in the single-hole-doped Mott insulator, by which the bare hole is turned into a non-Landau quasiparticle with translational symmetry breaking. Generalizations to pairing and finite doping are briefly discussed.
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of a device. Similarly, as dopants can turn a Mott insulator into a high temperature superconductor, their electronic behaviour at the atomic scale is of much interest. Due to limited time resolution of conventional scanning tunnelling microscopes, most atomic scale studies in these systems focussed on the time averaged effect of dopants on the electronic structure. Here, by using atomic scale shot-noise measurements in the doped Mott insulator Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$, we visualize sub-nanometer sized objects where remarkable dynamics leads to an enhancement of the tunnelling current noise by at least an order of magnitude. From the position, current and energy dependence we argue that these defects are oxygen dopant atoms that were unaccounted for in previous scanning probe studies, whose local environment leads to charge dynamics that strongly affect the tunnelling mechanism. The unconventional behaviour of these dopants opens up the possibility to dynamically control doping at the atomic scale, enabling the direct visualization of the effect of local charging on e.g. high T$_{text{c}}$ superconductivity.
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